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We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a…

介观与纳米尺度物理 · 物理学 2010-01-27 Alexander A. Khajetoorians , Gregory A. Fiete , Chih-Kang Shih

Quantum Wells (QW) are of great importance in optoelectronic devices such as LEDs and LASERs, being the emissive layers.Simulating the quantum particles in different QW topologies like rectangular finite potential wells, multiple potential…

介观与纳米尺度物理 · 物理学 2025-08-12 Barbaros Şair

Quantum-confined electronic states such as quantum-well states (QWS) inside thin Pb(111) films and modified image-potential states (IPS) above the Pb(111) films grown on Si(111)7$\times$7 substrate were studied by means of low-temperature…

介观与纳米尺度物理 · 物理学 2020-08-05 A. Yu. Aladyshkin

Low temperature scanning tunneling microscopy is used to image the doped topological insulator Bi$_{2-x}$Fe$_x$Se$_3$. Interstitial Fe defects allow the detection of quasiparticle interference (QPI), and the reconstruction of the empty…

Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy…

材料科学 · 物理学 2024-04-19 Takahito Takeda , Kengo Takase , Vladimir N. Strocov , Masaaki Tanaka , Masaki Kobayashi

The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions…

Electrons can form a two-dimensional electron gas at metal surfaces, where lateral confinement leads to quantum-well states. Such states have been observed for highly itinerant electrons, but it remains an open question whether quantum-well…

Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and…

Weyl semimetals may open a new era in condensed matter physics, materials science and nanotech after graphene and topological insulators. We report the first atomic scale view of the surface states of a Weyl semimetal (NbP) using scanning…

In this study, the quantum state depression (QSD) in semiconductor quantum well (QW) is investigated. The QSD emerge from the ridged geometry of the QW boundary. Ridges impose additional boundary conditions on the electron wave function and…

介观与纳米尺度物理 · 物理学 2009-09-02 Avto Tavkhelidze , Vasiko Svanidze

We discuss methods of quantum state tomography for solid-state systems with a large nuclear spin $I=3/2$ in nanometer-scale semiconductors devices based on a quantum well. Due to quadrupolar interactions, the Zeeman levels of these…

Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical…

介观与纳米尺度物理 · 物理学 2009-07-27 A. Valavanis , Z. Ikonić , R. W. Kelsall

The authors theoretically investigate quantum confinement and transition energies in quantum wells (QWs) asymmetrically positioned in wrinkled nanomembranes. Calculations reveal that the wrinkle profile induces both blue- and redshifts…

介观与纳米尺度物理 · 物理学 2012-06-14 P. Cendula , S. Kiravittaya , O. G. Schmidt

The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated…

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…

Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12…

软凝聚态物质 · 物理学 2009-11-07 A. Arranz , J. F. Sanchez-Royo , J. Avila , V. Perez-Dieste , P. Dumas , M. C. Asensio

The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low…

In a semiconductor-based double quantum well (QW) coupled to a degree of freedom with an internal dynamics, we demonstrate that the electronic motion is controllable within femtoseconds by applying appropriately shaped electromagnetic…

介观与纳米尺度物理 · 物理学 2015-05-20 Michael Schueler , Yaroslav Pavlyukh , Jamal Berakdar

Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving…

Quantum walks are central to a wide range of applications such as quantum search, quantum information processing, and entanglement transport. Gaining control over the duration and the direction of quantum walks (QWs) is crucial to…

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