相关论文: Failure Mode Analysis in Microsecond UV Laser Anne…
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit…
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional…
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line resistance by enlarging metal grains in lines or in thin…
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is…
Microscale additive manufacturing of reflective copper is becoming increasingly important for microelectronics and microcomputers, due to its excellent electrical and thermal conductivity. Yet, it remains challenging for state-of-the-art…
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser…
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to…
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed…
The thermal decomposition behavior, the microstructural evolution and its influence on the mechanical properties of a supersaturated Cu Co solid solution with ~100 nm average grain size prepared by severe plastic deformation is investigated…
The miniaturization of electronic devices brings severe challenges in the deposition of metal interconnects in back end of line processing due to a continually decreasing volume available for metal deposition in the interconnect via. Cu is…
Semiconductor lasers with ultra-low thresholds and minimal footprints are a topic of active research. Such devices require a combination of high quality factor laser cavities with small active region volumes, which drives the quest for…
Selective thin-film removal is needed in many microfabrication processes such as 3-D patterning of optoelectronic devices and localized repairing of integrated circuits. Various wet or dry etching methods are available, but laser machining…
We demonstrate a hybrid laser microfabrication approach, which combines the technical merits of ultrafast laser-assisted chemical etching and carbon dioxide laser-induced in-situ melting, for centimeter-scale and bonding-free fabrication of…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…
Thin films of the superconductor YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He$^+$ beams, and the long-term stability of irradiation-induced defects was investigated.…
We fabricated two dimensional photonic crystal structures in zinc oxide films with focused ion beam etching. Lasing is realized in the near ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing…
Controlling the microstructure of thin films is of critical importance for various applications. We demonstrate a methodology for tuning the local microstructure through film-substrate interactions using Ag-Cu as a model system. Metastable…
Thin films of molybendum disulfide grown via thermal atomic layer deposition at low temperatures, suitable for temperature sensible substrates, can be amorphous. To avoid a high temperature post treatment of the whole sample, which can…
In this paper, the oxidation-assisted dealloying (OAD) of Cu0.7Al0.3 films with different microstructures which were obtained by high vacuum annealing at different temperatures were studied using powder X-ray diffraction, field-emission…
As superconducting quantum processors increase in complexity, techniques to overcome constraints on frequency crowding are needed. The recently developed method of laser-annealing provides an effective post-fabrication method to adjust the…