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In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…

We study the electronic structure of bulk 1T-TaSe$_2$ in the charge density wave phase at low temperature. Our spatially and angle resolved photoemission (ARPES) data show insulating areas coexisting with metallic regions characterized by a…

Layered transition metal dichalcogenides (TMDs) stabilize in multiple structural forms with profoundly distinct and exotic electronic phases. Interfacing different layer types is a promising route to manipulate TMDs' properties, not only as…

Layered van der Waals materials are exciting as they often host multiple, competing electronic phases. This article reports experimental observation of the co-existence of insulating and metallic phases deep within the commensurate charge…

介观与纳米尺度物理 · 物理学 2021-12-23 Sruthi S , Hemanta Kumar Kundu , Prasad Vishnubhotla , Aveek Bid

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

The origin of the insulating state in 1T-TaS$_2$ has long been a subject of debate. A short current pulse transforms this insulating state into a metastable metallic phase. Using micro-ARPES, we investigate the electronic structure of this…

Electronic phases that lie outside the equilibrium ground state offer a route to explore competing configurations in correlated materials. In 1T-TaS2, ultrafast excitation accesses a metallic hidden phase that is distinct from the…

强关联电子 · 物理学 2026-05-22 Turgut Yilmaz , Anil Rajapitamahuni , Suji Park , Houk Jang , Asish K. Kundu , Elio Vescovo

For layered materials, the interlayer stacking is a critical degree of freedom tuning electronic properties, while its microscopic characterization faces great challenges. The transition-metal dichalcogenide 1T-TaS$_2$ represents a novel…

材料科学 · 物理学 2025-08-01 Li Cheng , Linpeng Nie , Xuanyu Long , Li Liang , Dan Zhao , Jian Li , Zheng Liu , Tao Wu , Xianhui Chen , Xiaolong Zou

Controlled stacking of van der Waals materials is a powerful tool for exploring the physics of quantum condensed matter. Given the small binding between layers, exploitation for engineering will require a breakthrough in stacking…

强关联电子 · 物理学 2026-03-05 Nelson Hua , Francesco Petocchi , Henry G. Bell , Gabriel Aeppli , Philipp Werner , Simon Gerber

The transition metal dichalcogenides 1T-TaS$_2$ and 1T-TaSe$_2$ have been extensively studied for the complicated correlated electronic properties. The origin of different surface electronic states remains controversial. We apply scanning…

强关联电子 · 物理学 2022-01-11 Wenhao Zhang , Zongxiu Wu , Kunliang Bu , Ying Fei , Yuan Zheng , Jingjing Gao , Xuan Luo , Zheng Liu , Yu-ping Sun , Yi Yin

4Hb-TaS_2, a van der Waals superlattice comprising alternate stacked Ising superconducting 1H-TaS_2 and cluster Mott insulating 1T-TaS_2, exhibits emergent properties beyond those of its constituent layers. Notable phenomena include…

Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal…

强关联电子 · 物理学 2020-05-29 Kunliang Bu , Wenhao Zhang , Ying Fei , Zongxiu Wu , Yuan Zheng , Jingjing Gao , Xuan Luo , Yu-Ping Sun , Yi Yin

Understanding how microscopic interactions control macroscopic phase transitions is central to quantum materials, where charge density waves (CDWs), Mott states, and superconductivity often compete. In $1T$-TaS$_2$, this competition is tied…

强关联电子 · 物理学 2026-03-06 Achyut Tiwari , Bruno Gompf , Martin Dressel

This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top…

Although strong electronic correlations are known to be responsible for some highly unusual behaviors of solids such as, metal--insulator transitions, magnetism and even high--temperature superconductivity, their interplay with recently…

强关联电子 · 物理学 2019-12-19 Vsevolod Ivanov , Xiangang Wan , Sergey Y. Savrasov

Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain…

ARPES studies of the protected surface states in the Topological Insulator $% Bi_{2}Te_{3}$ have revealed the existence of an important hexagonal warping term in its electronic band structure. This term distorts the shape of the Dirac cone…

介观与纳米尺度物理 · 物理学 2023-06-12 Zhou Li , J. P. Carbotte

Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a…

The commensurate charge-density-wave phase of the prototypical transition metal dichalcogenide $1T$-TaS$_2$ is investigated by temperature- and polarization-dependent infrared spectroscopy, revealing distinct charge dynamics parallel and…

强关联电子 · 物理学 2026-01-21 Achyut Tiwari , Maxim Wenzel , Renjith Mathew Roy , Christian Prange , Bruno Gompf , Martin Dressel

Correlated two-dimensional (2D) layers, like 1T-phases of TaS2, TaSe2 and NbSe2, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of electron-correlation in the 2D limit. However, the coupling…

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