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相关论文: Tracking interfacial changes of graphene/Ge(110) d…

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By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point,…

Graphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene…

材料科学 · 物理学 2008-06-04 Zhen Hua Ni , Hao Min Wang , Yun Ma , Johnson Kasim , Yi Hong Wu , Ze Xiang Shen

Graphene is one of the most promising 2D materials for various applications due to its unique electronic properties and high thermal stability. In previous studies, it was shown that when graphene is deposited onto some transition metal…

材料科学 · 物理学 2018-02-13 Tianbai Li , Jory A. Yarmoff

The smearing of the graphene/graphane interface due to the thermally activated migration of hydrogen atoms is studied by the molecular dynamics method. Contrary to expectations, it is found that the fast spontaneous regeneration of this…

介观与纳米尺度物理 · 物理学 2015-05-14 L. A. Openov , A. I. Podlivaev

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. Graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission…

In this note, we report a Raman spectroscopy study of annealing-induced effects on graphene samples prepared by the microexfoliation method. It was shown that randomly located adhesive residues often contaminate nearby graphene sheets…

材料科学 · 物理学 2011-04-19 Jieun Song , Taeg Yeoung Ko , Sunmin Ryu

In this report, we present Raman spectroscopy investigation of the thermal stability and dynamics of graphene edges. It was found that graphene edges (both armchair and zigzag) are not stable and undergo modifications even at temperature as…

材料科学 · 物理学 2010-12-15 Ya Nan Xu , Da Zhan , Lei Liu , Hui Suo , Zhen Hua Ni , Thuong Thuong Nguyen , Chun Zhao , Ze Xiang Shen

Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks ob-served in annealed graphene and elucidate…

材料科学 · 物理学 2013-10-31 Jinpyo Hong , Min Kyu Park , Eun Jung Lee , DaeEung Lee , Dong Seok Hwang , Sunmin Ryu

Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads…

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary…

材料科学 · 物理学 2014-08-26 A. Gao , C. J. Lee , F. Bijkerk

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa.…

介观与纳米尺度物理 · 物理学 2013-01-30 Amelia Barreiro , Felix Boerrnert , Mark H. Ruemmeli , Bernd Buechner , Lieven M. K. Vandersypen

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel…

化学物理 · 物理学 2016-01-28 Zhenjun Zhang , Fan Yang , Pratik Agnihotri , Ji Ung Lee , Jim R. Lloyd

Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or…

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that…

介观与纳米尺度物理 · 物理学 2017-09-28 E. Zion , A. Butenko , Yu. Kaganovskii , V. Richter , L. Wolfson , A. Sharoni , E. Kogan , M. Kaveh , I. Shlimak

The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are…

Controlled defect creation is a prerequisite for the detailed study of disorder effects in materials. Here, we irradiate a graphene/Ir(111)-interface with low-energy Ar+ to study the induced structural changes. Combining computer…

材料科学 · 物理学 2013-11-01 E. H. Åhlgren , S. K. Hämäläinen , O. Lehtinen , P. Liljeroth , J. Kotakoski

The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing…

介观与纳米尺度物理 · 物理学 2012-05-17 Andres Castellanos-Gomez , Magdalena Wojtaszek , Arramel , Nikolaos Tombros , Bart J. van Wees

Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More…

光学 · 物理学 2024-03-21 Somayeh Gholipour , Maryam Bahreini , Mohamad Reza Jafarfard

Graphene is a very promising material for nanoelectronics applications due to its unique and remarkable electronic and thermal properties. However, when deposited on metallic electrodes the overall thermal conductivity is significantly…

We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the…

介观与纳米尺度物理 · 物理学 2019-09-17 L. Persichetti , M. De Seta , A. M. Scaparro , V. Miseikis , A. Notargiacomo , A. Ruocco , A. Sgarlata , M. Fanfoni , F. Fabbri , C. Coletti , L. Di Gaspare
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