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Linear conductance of graphene-based p-n junctions with Rashba spin-orbit coupling is considered theoretically. A square potential step is used to model the junctions, while the coupling is introduced in terms of the Kane-Mele model (C.L.…

介观与纳米尺度物理 · 物理学 2012-06-29 Marek Rataj , Józef Barnaś

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance-…

介观与纳米尺度物理 · 物理学 2017-06-07 V. Ranjan , S. Zihlmann , P. Makk , K. Watanabe , T. Taniguchi , C. Schönenberger

We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of…

介观与纳米尺度物理 · 物理学 2011-07-15 S. Nakaharai , J. R. Williams , C. M. Marcus

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…

Electron optics deals with condensed matter platforms for manipulating and guiding electron beams with high efficiency and robustness. Common devices rely on the spatial confinement of the electrons into one-dimensional channels. Recently,…

介观与纳米尺度物理 · 物理学 2024-03-04 Yuhao Zhao , Anina Leuch , Oded Zilberberg , Antonio Štrkalj

Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case of arbitrary current regime: from ballistic to diffusive one.…

材料科学 · 物理学 2016-12-21 Maksym V. Strikha , Anna N. Morozovska

We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

We report on the fabrication of hybrid molecular devices employing multilayer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope (HIM) or an oxygen plasma etch. The patterning step allows for the…

One- and two-layer graphene have recently been shown to feature new physical phenomena such as unconventional quantum Hall effects and prospects of supporting a non-silicon technological platform using epitaxial graphene. While both one-…

介观与纳米尺度物理 · 物理学 2013-05-29 C. P. Puls , N. E. Staley , Y. Liu

Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…

介观与纳米尺度物理 · 物理学 2010-09-10 Benjamin E. Feldman , Jens Martin , Amir Yacoby

Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…

The potential of graphene for use in photonic applications was evidenced by recent demonstrations of modulators, polarisation rotators, and isolators. These promising yet preliminary results raise crucial questions: what is the optimal…

We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from…

材料科学 · 物理学 2024-06-12 Guangnan Zhou , Yang Jiang , Gaiying Yang , Qing Wang , Mengya Fan , Lingli Jiang , Hongyu Yu , Guangrui Xia

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and…

介观与纳米尺度物理 · 物理学 2011-06-08 T. J. B. M. Janssen , A. Tzalenchuk , R. Yakimova , S. Kubatkin , S. Lara-Avila , S. Kopylov , V. Fal'ko

Significant excitonic effects were observed in graphene by measuring its optical conductivity in a broad spectral range including the two-dimensional {\pi}-band saddle-point singularities in the electronic structure. The strong…

材料科学 · 物理学 2015-05-20 Kin Fai Mak , Jie Shan , Tony F. Heinz

We give the results of density functional calculations for graphene with a widely varying fluorine adsorptions. We give a systematic analysis of the adsorption energies, lattice constants, bulk modulus, bandgap openings, and magnetic…

材料科学 · 物理学 2014-11-13 Chad E. Junkermeier , Stefan C. Badescu , Thomas L. Reinecke

High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3…

We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…

介观与纳米尺度物理 · 物理学 2019-01-23 Shaowen Chen , Rebeca Ribeiro-Palau , Kang Yang , Kenji Watanabe , Takashi Taniguchi , James Hone , Mark O. Goerbig , Cory R. Dean

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…

介观与纳米尺度物理 · 物理学 2011-12-30 M. C. Lemme , F. H. L. Koppens , A. L. Falk , M. S. Rudner , H. Park , L. S. Levitov , C. M. Marcus