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We have studied flux-pinning effects of MgB$_2$ superconductor by doping (Fe, Ti) particles of which radius is 163 nm on average. 5 wt.\% (Fe, Ti) doped MgB$_2$ among the specimens showed the best field dependence of magnetization and 25…

超导电性 · 物理学 2020-12-22 H. B. Lee , G. C. Kim , Young Jin Shon , Dongjin Kim , Y. C. Kim

Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove…

介观与纳米尺度物理 · 物理学 2013-10-01 Mohammad Koleini , Thomas Frauenheim , Binghai Yan

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic…

材料科学 · 物理学 2009-11-13 K. Hamaya , K. Ueda , Y. Kishi , Y. Ando , T. Sadoh , M. Miyao

To elucidate the pseudogap phase diagram including the overdoped state of high transition temperature (high-$T_c$) cuprates, we must understand the origin of the positive out-of-plane magnetoconductivity (MC) observed in these compounds.…

The growth of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically…

In this work, we find by means of first principle calculations a new physical mechanism to generate a two dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge ordered semiconductor due to the…

材料科学 · 物理学 2013-05-22 Verónica Vildosola , Francisco Güller , Ana M. Llois

(Al,Cr)2O3 coatings with Al/(Al+Cr) = 0.5 or Al = 70 at.%, doped with 0, 5 or 10 at.% Si, were deposited on hard metal and Si(100) substrates to elucidate the influence of Si on the resulting coatings. The chemical analysis of the coatings…

TiO$_2$ anatase has its significant importance in energy and environmental research. However, the major drawback of this immensely popular semi-conductor is its large bandgap of 3.2 eV. Several non-metals have been doped experimentally for…

材料科学 · 物理学 2020-02-25 Pooja Basera , Shikha Saini , Saswata Bhattacharya

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…

The conductivity of the electron hole and polaron conductor La1-xSrxFe0.75Ni0.25O3-{\delta}, a potential cathode material for intermediate temperature solid oxide fuel cells, was studied for 0 <x < 1 and for temperatures 300 K <T < 1250 K.…

We have conducted a detailed high-pressure (HP) investigation on $Eu-$doped $BaTiO_3$ using angle-resolved x-ray diffraction, Raman spectroscopy, dielectric permittivity and dc resistance measurements. The x-ray diffraction data analysis…

材料科学 · 物理学 2023-04-04 Mrinmay Sahu , Bishnupada Ghosh , Bobby Joseph , Goutam Dev Mukherjee

The discovery of about 50 K superconductivity in the tetragonal Fe-based pnictides has stimulated the search for superconductivity in a wide class of materials with similar structure. Copper forms compounds isostructural to LaOFeAs. Single…

超导电性 · 物理学 2015-05-14 A. Ubaldini , E. Giannini , C. Senatore , D. van de Marel

Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the…

超导电性 · 物理学 2009-09-14 T. Kawaguchi , H. Uemura , T. Ohno , R. Watanabe , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta

Polarization induced degenerate $n$-type doping with electron concentrations up to $\sim$10$^{20}$\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$N layers ($x$: 0\%$\rightarrow$37\%) grown on unintentionally doped and on $n$-doped…

介观与纳米尺度物理 · 物理学 2016-02-17 R. Adhikari , Tian Li , G. Capuzzo , A. Bonanni

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show…

The superconductivity phase diagrams of electron doped cuprates of the form R(2-x)CexCuO4 (with R= La, Pr, Nd, Sm, and Eu) have been determined for cerium compositions 0 < x < 0.36 in a consistent series of epitaxial thin films grown by…

超导电性 · 物理学 2008-05-08 Y. Krockenberger , J. Kurian , A. Winkler , A. Tsukada , M. Naito , L. Alff

With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by…

材料科学 · 物理学 2023-06-02 Rodrigo T. Paulino , Marcos A. Avila

The temperature behaviour of the anchoring energy of nematic liquid crystal MBBA at the substrates with oblique SiO evaporation and director orientation at the interface have been studied by means of magnetic Freedericksz transition…

软凝聚态物质 · 物理学 2007-05-23 M. V. Khazimullin , A. P. Krekhov , Yu. A. Lebedev

We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial…

材料科学 · 物理学 2012-05-23 R. Wicks , S. G. Altendorf , C. Caspers , H. Kierspel , R. Sutarto , L. H. Tjeng , A. Damascelli

The distance of apical O to planes, d, is introduced as serving as an arbiter in the dispute between different local O coordination (n) in determining charge equilibration in YBa2Cu3Oy. We assign reported cell volume and plane expansion…

超导电性 · 物理学 2015-12-01 H Oesterreicher
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