相关论文: Memristor Compact Model with Oxygen-Vacancy Concen…

Conceptual memristors have recently gathered wider interest due to their diverse application in non-von Neumann computing, machine learning, neuromorphic computing, and chaotic circuits. We introduce a compact CMOS circuit that emulates…

The paper concerns the construction of a compressible liquid-vapor relaxation model which is able to capture the metastable states of the non isothermal van der Waals model as well as saturation states. Starting from the Gibbs formalism, we…

We give analytical solutions to the titanium dioxide memristor with arbitary order of window functions, which assumes a nonlinear ionic drift model. As the achieved solution, the characteristic curve of state is demonstrated to be a useful…

We demonstrate a thermodynamic formulation to quantify defect formation energetics in an insulator under high electric field. As a model system, we analyzed neutral oxygen vacancies (color centers) in alkaline-earth-metal binary oxides…

The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…

We studied the electronic properties of beta-platinum dioxide ({\beta}-PtO2), a catalytic material, based on density functional theory. Using the GGA+U method which reproduces the GW band structures and the experimental structural…

We study an open-boundary version of the on-off zero-range process introduced in Hirschberg et al. [Phys. Rev. Lett. 103, 090602 (2009)]. This model includes temporal correlations which can promote the condensation of particles, a situation…

The study of zinc oxide, within the homogeneous electron gas approximation, results in overhybridization of zinc $3d$ shell with oxygen $2p$ shell, a problem shown for most transition metal chalcogenides. This problem can be partially…

Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization…

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging…

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a…

Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling perspective, the charge carrier DC current modeling of PCMO…

We perform all-electron path integral Monte Carlo (PIMC) and density functional theory molecular dynamics (DFT-MD) calculations to explore warm dense matter states of oxygen. Our simulations cover a wide density-temperature range of…

This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a…

Since electronic and magnetic properties of many transition-metal oxides can be efficiently controlled by external factors such as the temperature, pressure, electric or magnetic field, they are regarded as promising materials for various…

We provide a first-principles description of the crystalline and oxygen-deficient Ta2O5 using refined computational methods and models. By performing calculations on a number of candidate structures, we determined the low-temperature phase…

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

Resistive switching is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start…

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies,…