相关论文: Memristor Compact Model with Oxygen-Vacancy Concen…
We report the study of metal-STO-metal memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junction device, the evolution of the Density Of States (DoS) can…
We propose a class of mean-field models for the isostatic transition of systems of soft spheres, in which the contact network is modeled as a random graph and each contact is associated to $d$ degrees of freedom. We study such models in the…
We present some computer simulations run on a stochastic CA (cellular automaton). The CA simulates a gas of particles which are in a channel, the interval $[1,L]$ in $\mathbb Z$, but also in "reservoirs" $\mathcal R_1$ and $\mathcal R_2$.…
Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
This paper presents in-depth analysis of the excitable membranes of a biological system. We rigorously prove from the Chay neuron model that the state dependent voltage-sensitive potassium ion-channel and calcium sensitive potassium…
A discrete multistate kinetic model for water-wire proton transport is constructed and analyzed using Monte-Carlo simulations. The model allows for each water molecule to be in one of three states: oxygen lone pairs pointing leftward,…
We study the spectral density function of a two-dimensional electron liquid in a weak magnetic field, the filling factor $\nu\gg 1$. A hydrodynamic model for low-energy excitations of the liquid is developed. It is found that even at…
We present a combined experimental and theoretical study to get insight into both memory and negative differential resistance (NDR) effect in organic memory devices. The theoretical model we propose is simply a one-dimensional metallic…
Networks with memristive elements (resistors with memory) are being explored for a variety of applications ranging from unconventional computing to models of the brain. However, analytical results that highlight the role of the graph…
We investigate bistability and memory effects in a molecular junction weakly coupled to metallic leads with the latter being subject to an adiabatic periodic change of the bias voltage. The system is described by a simple Anderson-Holstein…
Zr oxides and oxynitrides are promising candidates to replace precious metal cathodes in polymer electrolyte fuel cells. Oxygen reduction reaction activity in this class of materials has been correlated with the amount of oxygen vacancies,…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
A system of ${N_{osc}}$ charged oscillators interacting with the electromagnetic field, spatially confined in a 3D lattice of sub-wavelength dimension, can condense into a superradiant coherent state if appropriate density and frequency…
A model of two self-sustained oscillators interacting through memristive coupling is studied. Memristive coupling is realized by using a cubic memristor model. Numerical simulation is combined with theoretical analysis by means of…
Unraveling the behavior of the electrons in the copper-oxygen planes of cuprate superconductors remains a challenge. Here we examine the electronic charge redistribution among planar copper and oxygen orbitals and the charge gap using the…
We present a model for the description of orientational relaxation in hydrogen-bonding liquids. The model contains two relaxation parameters which regulate the intensity and efficiency of dissipation, as well as the memory function which is…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
The growing use of ferroelectric-based technology, extending beyond conventional memory storage applications, necessitates the development of compact models that can be easily integrated into circuit simulation environments. These models…
A detailed exploration of the $f$-atomic orbital occupancy space for UO$_2$ is performed using a first principles approach based on density functional theory (DFT), employing a full hybrid functional within a systematic basis set.…