相关论文: Influences of the dissipative topological edge sta…
We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay…
The fractional quantum Hall (FQH) effect gives rise to abundant topological phases, presenting an ultimate platform for studying the transport of edge states. Generic FQH edge contains multiple edge modes, commonly including the…
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We…
Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of…
We predict by first-principles calculations that thin films of Cr-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulator have gapless non-chiral edge states coexisting with the chiral edge state. Such gapless non-chiral states are not…
The integer quantum Hall (QH) effects characterized by topologically quantized and nondissipative transport are caused by an electrically insulating incompressible phase that prevents backscattering between chiral metallic channels. We…
Low-energy transport in quantum Hall states is carried through edge modes, and is dictated by bulk topological invariants and possibly microscopic Boltzmann kinetics at the edge. Here we show how the presence or breaking of symmetries of…
Topology provides an essential concept for achieving unchanged (or protected) quantum properties in the presence of perturbations. A challenge facing realistic applications is that the level of protection displayed in real systems is…
The nature of edge state transport in quantum Hall systems has been studied intensely ever since Halperin [1] noted its importance for the quantization of the Hall conductance. Since then, there have been many developments in the study of…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
Quantized conductance from topologically protected edge states is a hallmark of two-dimensional topological phases. In contrast, edge states in one-dimensional (1D) topological systems cannot transmit current across the insulating bulk,…
We consider the quantum Hall effect (QHE) in a system of interacting electrons. Our formalism is valid for systems in the presence of an external magnetic field, as well as for systems with a nontrivial band topology. That is, the…
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…
Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, leading to the quantum anomalous Hall effect in…
Edge states in the integral quantum Hall effect on a lattice are reviewed from a topological point of view. For a system with edges which is realized inevitably in an experimental situation, the Hall conductance $\sigma_{xy}$ is given by a…
Helical edge states in quantum spin Hall (QSH) materials are central building blocks of topological matter design and engineering. Despite their principal topological protection against elastic backscattering, the level of operational…
Nonlinear electronic transport has emerged as a powerful probe of the quantum geometry in topological quantum materials, where the band topology and broken symmetries facilitate power law current voltage responses beyond Ohms law. While…
The quantum Hall effect (QHE) is a topologically protected phenomenon which has been observed in various systems. In experiments, the size of Hall bar device to realize the QHE is generally much larger than the phase coherence length, in…
The quantum-Hall-effect (QHE) occurs in topologically-ordered states of two-dimensional (2d) electron-systems in which an insulating bulk-state coexists with protected 1d conducting edge-states. Owing to a unique topologically imposed…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…