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Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using…

强关联电子 · 物理学 2009-11-11 H. W Eng , P. Limelette , W. Prellier , Ch. Simon , R. Fresard

The detection of fractionally charged quasiparticles, which arise in the fractional quantum Hall regime, is of fundamental importance for probing their exotic quantum properties. While electronic interferometers have been central to probe…

Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…

介观与纳米尺度物理 · 物理学 2013-08-26 J. Guignard , D. Leprat , D. C. Glattli , F. Schopfer , W. Poirier

Monolayer graphite films, or graphene, have quasiparticle excitations that can be described by 2+1 dimensional Dirac theory. We demonstrate that this produces an unconventional form of the quantized Hall conductivity $\sigma_{xy} = - (2…

介观与纳米尺度物理 · 物理学 2007-05-23 V. P. Gusynin , S. G. Sharapov

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…

We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial…

介观与纳米尺度物理 · 物理学 2015-06-03 Tian Shen , Adam T. Neal , Michael L. Bolen , Jiangjiang Gu , Lloyd W. Engel , Michael A. Capano , Peide Ye

We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the…

介观与纳米尺度物理 · 物理学 2017-09-13 A. Nachawaty , M. Yang , W. Desrat , S. Nanot , B. Jabakhanji , D. Kazazis , R. Yakimova , A. Cresti , W. Escoffier , B. Jouault

We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented…

介观与纳米尺度物理 · 物理学 2017-06-30 Franz J. Ahlers , Martin Götz , Klaus Pierz

The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous…

介观与纳米尺度物理 · 物理学 2025-07-29 Raul Perea-Causin , Hui Liu , Emil J. Bergholtz

The Hall effect, and the diagonal resistance, which indicates a residual resistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor…

介观与纳米尺度物理 · 物理学 2016-02-17 Ramesh G. Mani

We construct an effective Hamiltonian for electrons in the fractional quantum Hall regime for GaAs and graphene that takes into account Landau level mixing (for both GaAs and graphene) and subband mixing (for GaAs, due to the nonzero width…

介观与纳米尺度物理 · 物理学 2013-07-03 Michael R. Peterson , Chetan Nayak

An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order…

介观与纳米尺度物理 · 物理学 2015-06-12 H. Schmidt , J. C. Rode , C. Belke , D. Smirnov , R. J. Haug

Recent experimental and theoretical development in the Quantum Hall effect in monolayer graphene showed that the previous model of the valley-anisotropy interaction is incomplete, as it was assumed to be ultra-short range (USR). In this…

介观与纳米尺度物理 · 物理学 2025-01-28 Oleg Grigorev , Ankur Das

An in-situ study of Hall sensors based on single-layered graphene in neutron fluxes of a nuclear reactor to the fluence of 1.5e20 n/sq,m was conducted. The sensitivity of the sensors to the magnetic field remained stable throughout the…

Fabrication of devices made by isolated Graphene or Graphene-like single layers (such as h-BN) has opened up possibility of examining highly correlated states of electron systems in parts of their phase diagram that is impossible to access…

强关联电子 · 物理学 2015-12-08 Bahman Roostaei

The Hall (RH) and bend (RB) resistance of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction--dividing the Hall…

介观与纳米尺度物理 · 物理学 2012-04-23 Michael Barbiër , György Papp , François M. Peeters

Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs…

介观与纳米尺度物理 · 物理学 2019-01-15 Stefano Guiducci , Matteo Carrega , Giorgio Biasiol , Lucia Sorba , Fabio Beltram , Stefan Heun

The structure of a physisorbed sub-monolayer of 1,2-bis(4-pyridyl)ethylene (bpe) on epitaxial graphene is investigated by Low-Energy Electron Diffraction and Scanning Tunneling Microscopy. Additionally, non-equilibrium heat-transfer between…

材料科学 · 物理学 2020-08-26 Bareld Wit , Ole Bunjes , Martin Wenderoth , Claus Ropers

Strong interaction between electrons in two-dimensional systems in the presence of a high magnetic field gives rise to fractional quantum Hall states that host quasiparticles with fractional charge and fractional exchange statistics. Here,…

We investigate graphene and graphene layers on different substrates by monochromatic and white-light confocal Rayleigh scattering microscopy. The image contrast depends sensitively on the dielectric properties of the sample as well as the…