English

Direct Comparison of Fractional and Integer Quantized Hall Resistance

Mesoscale and Nanoscale Physics 2017-06-30 v6

Abstract

We present precision measurements of the fractional quantized Hall effect where the quantized resistance R[1/3]R^{[1/3]} in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance R[2]R^{[2]}, represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of 1(5.3±6.3)1081 - (5.3 \pm 6.3) 10^{-8} (95% confidence level) was obtained for the ratio (R[1/3]/6R[2])(R^{[1/3]}/6R^{[2]}). This constitutes the most precise comparison of integer resistance quantization (in terms of h/e2h/e^2) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the up-coming revision of the SI.

Keywords

Cite

@article{arxiv.1703.05213,
  title  = {Direct Comparison of Fractional and Integer Quantized Hall Resistance},
  author = {Franz J. Ahlers and Martin Götz and Klaus Pierz},
  journal= {arXiv preprint arXiv:1703.05213},
  year   = {2017}
}
R2 v1 2026-06-22T18:46:33.540Z