相关论文: Growth and characterization of ultrathin cobalt fe…

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and…

We report the effect of annealing on the superconductivity of MgB2 thin films as functions of the postannealing temperature in the range from 700 C to 950 C and of the postannealing time in the range from 30 min to 120 min. On annealing at…

Thin films of polycrystalline $\beta$-Mn structure CoZn have been grown on thermally oxidized Si substrates by co-sputtering from elemental targets followed by annealing. A range of films grown with variable Co deposition power and fixed Zn…

SrFe$_{12}$O$_{19}$ (SFO) films grown on Si (100) substrates by radio-frequency magnetron sputtering have been characterized in terms of composition, structural and magnetic properties by a combination of microscopy, diffraction and…

Highly (001) oriented thin films of Co2MnSi have been grown on lattice matched GaAs(001) without a buffer layer. Stoichiometric films exhibited a saturation magnetization slightly reduced from the bulk value and films grown at the highest…

The effects of growth rate (G_r), deposition temperature (T_d), film thickness (t_F), and substrate induced strain (epsilon) on morphological, crystallographic and magnetic characteristics of equiatomic CoPt epitaxial films synthesized with…

Growth of Co film on SiO2 substrates with the surface roughness of 0.5 nm and 1.6 nm has been studied in situ using the magneto-optical Kerr effect (MOKE) and four probe resistivity measurements. In-situ measurements jointly suggest the…

We report the growth of thin films of the mixed valence compound YbAl$_{3}$ on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction,…

This study systematically investigates the microstructural evolution of nanoparticle-based CuO, WO$_3$, and composite 'CuO-WO$_3$' thin films induced by their post-deposition annealing. The films were reactively deposited using a…

Films of Cu-K-In-Se were co-evaporated at varied K/(K+Cu) compositions and substrate temperatures (with constant (K+Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to…

Thin films of Ti1-xCoxO2 (x=0 and 0.03) have been prepared on sapphire substrates by spin-on technique starting from metalorganic precursors. When heat treated in air at 550 and 700 C respectively, these films present pure anatase and…

We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth.…

A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport…

We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The…

We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie temperature of the Ge0.895Fe0.105 film up to ~220 K while…

Ca- and Zn-subsituted Y1-xCaxBa2(Cu1-yZny)O7-delta (x = 0, 0.05 and y = 0, 0.02, 0.04, 0.05) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition (PLD) technique. Effects of various growth parameters on the…

We grew thin films of a heavy fermion chiral magnet YbNi$_3$Al$_9$ by using molecular beam epitaxy. They were grown on $c$-plane sapphire substrates under ultra-high vacuum while maintaining a deposition rate at a stoichiometric ratio among…

In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been…

Copper ferrite thin films were deposited on amorphous quartz substrates. The as deposited films were annealed in air and either quenched or slow cooled. Magnetization studies were carried out on the as deposited as well as annealed films…

We have used the two-step growth technique, quench condensing followed by an anneal, to grow ultra thin films of silver on glass substrates. As has been seen with semiconductor substrates this process produces a metastable homogeneous…