相关论文: Computational Associative Memory with Amorphous In…
Atomically thin oxides are increasingly recognized as an emerging class of 2D materials, yet their multifunctional properties have been far less investigated compared to other layered materials. Among these, gallium oxide is distinguished…
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…
Analog In-Memory Computing (AIMC) is emerging as a disruptive paradigm for heterogeneous computing, potentially delivering orders of magnitude better peak performance and efficiency over traditional digital signal processing architectures…
We propose advancing photonic in-memory computing through three-dimensional photonic-electronic integrated circuits using phase-change materials (PCM) and AlGaAs-CMOS technology. These circuits offer high precision (greater than 12 bits),…
The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using…
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…
Transformer networks, driven by self-attention, are central to Large Language Models. In generative Transformers, self-attention uses cache memory to store token projections, avoiding recomputation at each time step. However, GPU-stored…
Transformer-based models dominate modern AI workloads but exacerbate memory bottlenecks due to their quadratic attention complexity and ever-growing model sizes. Existing accelerators, such as Groq and Cerebras, mitigate off-chip traffic…
The Transformer architecture, underpinned by the self-attention mechanism, has become the de facto standard for sequence modeling tasks. However, its core computational primitive scales quadratically with sequence length (O(N^2)), creating…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
The channel capacity of a nonlinear, dispersive fiber-optic link is revisited. To this end, the popular Gaussian noise (GN) model is extended with a parameter to account for the finite memory of realistic fiber channels. This finite-memory…
Continued scaling into the sub 7 nm regime exacerbates quantum limited resistivity in Cu interconnects. We evaluated layered PdCoO2 and explicitly benchmarked it against Cu to identify mechanisms that maintain conductivity under…
One of the main challenges towards the growing computation-intensive applications with scalable bandwidth requirement is the deployment of a dense number of on-chip cores within a chip package. To this end, this paper investigates the…
To continue scaling beyond 2-D CMOS with 3-D integration, any new 3-D IC technology has to be comparable or better than 2-D CMOS in terms of scalability, enhanced functionality, density, power, performance, cost, and reliability.…
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the…
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel…
Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to improve flash reliability with a multitude of low-cost…
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from…
We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different…
Layered 2D graphene oxide (GO) films are integrated with silicon nitride (SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearity via four wave mixing (FWM). Owing to the strong light matter interaction between the SiN…