相关论文: Computational Associative Memory with Amorphous In…

Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…

Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…

Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…

Tunable optical material properties enable novel applications in both versatile metamaterials and photonic components including optical sources and modulators. Transparent conductive oxides (TCOs) are able to highly tune their optical…

Semantic Communication (SC) is a novel paradigm for data transmission in 6G. However, there are several challenges posed when performing SC in 3D scenarios: 1) 3D semantic extraction; 2) Latent semantic redundancy; and 3) Uncertain channel…

In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…

Analog beamforming holds great potential for future terahertz (THz) communications due to its ability to generate high-gain directional beams with low-cost phase shifters.However, conventional analog beamforming may suffer substantial…

An online shaping technique for high performance communication over Gaussian channels with Inter-Symbol Interference (ISI) and receiver Analog to Digital Converter (ADC) noise is presented. The technique uses online transmitter precoding…

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made…

In this paper, we propose a Junctionless (JL)/Accumulation Mode (AM) transistor with an access transistor (JL in series with JL/AM transistor) based capacitorless Dynamic Random Access Memory (1TDRAM) cell. The JL transistor overcomes the…

Terahertz (THz) extremely large-scale MIMO (XL-MIMO) is considered a key enabling technology for 6G and beyond due to its advantages such as wide bandwidth and high beam gain. As the frequency and array size increase, users are more likely…

Floating gate SONOS (Silicon-Oxygen-Nitrogen-Oxygen-Silicon) transistors can be used to train neural networks to ideal accuracies that match those of floating point digital weights on the MNIST dataset when using multiple devices to…

Recent works propose neural network- (NN-) inspired analog-to-digital converters (NNADCs) and demonstrate their great potentials in many emerging applications. These NNADCs often rely on resistive random-access memory (RRAM) devices to…

This paper presents a robust and efficient very high-order scheme for compressible flow simulation, addressing critical limitations of existing high-order methods. The proposed scheme combines the compact gas-kinetic scheme (CGKS) with an…

On-chip integration of highly anisotropic two-dimensional (2D) materials offers new opportunities for realizing high performance polarization selective devices. Obtaining optimized designs for such devices requires extensively sweeping…

The minimum average signal-to-noise ratio (SNR) per bit required for error-free transmission over a fading channel is derived, and is shown to be equal to that of the additive white Gaussian noise (AWGN) channel, which is $-1.6$ dB.…

3D FPGAs have recently been produced as the next generation of the FPGA family to continue the integration of more transistors on a single chip seamlessly. In this paper, we propose a complete CAD flow to implement an arbitrary logic…