相关论文: Deep insights into the local structure of amorphou…
We investigate the effect of annealing temperature on the crystalline structure and physical properties of tantalum-pentoxide films grown by radio frequency magnetron sputtering. For this purpose, several tantalum films were deposited and…
Numerous different crystal structures of Ta2O5 are reported in literature. Although experimentally and computationally obtained lattice parameters and mechanical properties are in excellent agreement there is a pronounced deviation when it…
We use muon spin rotation/relaxation/resonance ($\mu$SR) to investigate the magnetic properties of niobium pentoxide (Nb$_2$O$_5$) and tantalum pentoxide (Ta$_2$O$_5$) thin films. In both oxides, we observe a magnetic response at the lowest…
The effect of argon ion bombardment on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering was investigated by X-ray photoelectron spectroscopy. All samples were…
Systematic investigation of atomic structure of N-ion implanted TiO2 (thin films and bulk ceramics) was performed by XPS measurements (core levels and valence bands) and first-principles density functional theory (DFT) calculations. In bulk…
We have investigated by spectroscopic ellipsometry (SE, 190-1700 nm) the optical properties of uniform, amorphous thin films of Ta2O5 and Nb2O5 as deposited and after annealing, and after so-called "doping" with Ti atoms which leads to…
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic…
Amorphous titanium dioxide TiO2 (a-TiO2) has been widely studied, particularly as a protective coating layer on semiconductors to prevent corrosion and promote electron-hole conduction in photoelectrochemical reactions. The stability and…
Tantalum pentoxide (Ta2O5) is a wide-gap semiconductor which has important technological applications. Despite the enormous efforts from both experimental and theoretical studies, the ground state crystal structure of Ta2O5 is not yet…
The ability to control porosity in oxide thin films is one of the key factors that determine their properties. Despite the abundance of dry processes for the synthesis of oxide porous layers, the high porosity range is typically achieved by…
Ta films with tetragonal crystalline structure (beta-phase), deposited by magnetron sputtering on different substrates (steel, silicon and silicon dioxide), have been studied. In all cases, very highly preferred (001) orientation was…
Ionic conduction in crystalline solids is conventionally understood to proceed via atomic-scale defects such as vacancies or interstitials. Here, by addressing the long-standing structural ambiguity of high-temperature tetragonal tantalum…
Thin films of amorphous (a)-TiO2 are ubiquitous as photocatalysts, protective coatings, photoanodes and in memory application, where they are exposed to excess electrons and holes. We investigate trapping of excess electrons and holes in…
Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5-5keV. X-ray photoelectron spectroscopy (XPS) and Factor Analysis (FA) have been used to…
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In…
The temperature dependent local structure of TbMn2O5 was determined by x-ray absorption spectroscopy. An anomalous Tb-O distribution is found. At high temperature it is broad but resolves into two distinct peaks below approximately 180 K.…
Indium-tin oxide (ITO) is a crucial functional layer for the optoelectronic applications, such as non-volatile color display thin films based on the ITO/phase-change material (PCM)/ITO/reflective metal multilayer structures on a silicon…
An approach combining the Rietveld method and pairs distribution function analysis was developed and can help to understand the effect of temperature and/or high-pressure on crystalline materials. It was applied to orthorhombic Ta2O5…
Tantalum pentoxide (Ta2O5), as a silicon-photonic-compatible material platform, has garnered significant attention for high-performance integrated photonics due to its exceptional properties: a broad transparency window spanning from 0.28…
Here we report on studying the electronic and optical material properties of the technologically-relevant material indium tin oxide (ITO) as a function of thermal annealing. In this work, ITO powder has been prepared utilizing solid-state…