相关论文: Deep insights into the local structure of amorphou…

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and…

The growth of amorphous TiO2 and anisotropic-polycrystalline ZnO thin-films is studied by means of coarse-grained three-dimensional kinetic Montecarlo simulations under conditions typically encountered in Plasma Enhanced Chemical Vapor…

We have performed fluorescence x-ray absorption fine-structure (XAFS) measurements from 20-200 K on a 5000 \AA, c-axis film of YBa_2Cu_3O_{7-\delta} (YBCO) on MgO (Tc=89 K) using photons polarized perpendicular to the film. These data are…

In this paper we study the possible relation between the electronic and magnetic structure of the TiO2/LaAlO3 interface and the unexpected magnetism found in undoped TiO2 films grown on LaAlO$_3$. We concentrate on the role played by…

We investigated the initial growth of TiTe$_2$ on Au(111) from sub-monolayer to multi-layer coverage by scanning tunneling microscopy (STM), low-energy electron diffraction intensity analysis (LEED-IV), and density functional theory (DFT).…

Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence…

We present the structural and dynamical studies of layered vanadium pentaoxide (V2O5). The temperature dependent X-ray diffraction measurements reveal highly anisotropic and anomalous thermal expansion from 12 K to 853 K. The results do not…

Oblique angle deposited oxide thin films have opened up new dimensions in fabricating optical interference devices with tailored refractive index profile along thickness by tuning its microstructure by varying angle of deposition.…

Uranium dihydride UH2 is a metastable phase unknown in bulk form but accessible through thin-film synthesis. We prepared UH2 films by reactive dc sputtering on CaF2(001) or Si(001) substrates, the latter equipped with a Mo buffer layer to…

Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…

Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV…

Tantalum thin films sputtered on unheated silicon substrates are characterized with microwaves at around 10 GHz in a 10 mK environment. We show that the phase of tantalum with a body-centered cubic lattice ($\alpha$-Ta) can be grown…

The optical properties of thermally annealed TiO2 samples depend on their preparation process, and the TiO2 thin films usually exist in the form of anatase or rutile or the mixture of the two phases. The electronic structures and optical…

Thermally-treating amorphous indium-oxide films is used in various basic studies as a means of tuning the system disorder. In this process the resistance of a given sample decreases while its amorphous structure and chemical composition is…

Crystalline symmetries have played a central role in the identification of topological materials. The use of symmetry indicators and band representations have enabled a classification scheme for crystalline topological materials, leading to…

Thin-film based phase plates are meanwhile a widespread tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration…

Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance…

Using the MALDI-TOF spectroscopy method, clusters of non-stoichiometric tantalum oxychlorides formed as a result of hydrolysis of nanoscale reaction products of tantalum pentachloride with acetylene and of interaction with oxygen and air…

The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$…

Inspired by nature, we investigate the short-range order effect on the physical properties of amorphous materials. Amorphous Al2O3 thin films exhibit a higher proportion of their 4-coordinated Al sites close to the surface, causing…