相关论文: Hydrogen incorporation into amorphous indium galli…
We investigated the microscopic and electronic structures amorphous oxide semiconductors InGaZnO$_{4}$ (a-IGZO) and the role of O-deficiency through the first-principle calculations. The structure of the amorphous oxide is complicated by…
The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin oxide, SnO, and copper oxide, Cu$_2$O. The TFT photoconduction…
Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…
In hydrogenated amorphous silicon oxide (a-SiO:H) films, incorporation of oxygen enhances optical gap due to a large number of St-O-Si bond formation, which lies deep into valence band states. An induction effect of this Si-O on other bonds…
We found that a surface state induced by hydrogenation on the surface of SrTiO$_{3}$(001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of…
We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InOx doped with low and high…
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…
The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been…
Thermo-optic (TO) phase shifters are very fundamental units in large-scale active silicon photonic integrated circuits (PICs). However, due to the limitation of microheater materials with a trade-off between heating efficiency and…
Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO$_2$ has several…
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been…
An H atom inserted into hydrogen monolayer on the Si(100)-2x1 surface has been studied using the density functional theory. Hydrogen-induced defects were considered in their neutral, negative, and positive charge states. It was found that…
We report combined experimental and first principles investigations of hydrogen absorption in epitaxial vanadium films on MgO(001) with nominal thicknesses of 10 nm and 50 nm. In - situ optical transmission and four - probe resistance…
The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and…
As electronic devices approach the atomic limit, the charge dynamics of individual dopant atoms increasingly constrain performance, stability, and coherence. In scanning tunnelling microscopy (STM), donor ionization is typically interpreted…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…
Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz…
In traditional semiconductors with large effective Bohr radius, an electron donor creates a hydrogen-like bound state just below the conduction band edge. The properties of the impurity band arising from such hydrogenic impurities have been…
Hydrogen-bond networks govern molecular structure and function across chemistry, biology and materials science, yet their deterministic control at the atomic scale remains a central challenge (1-9).Here, we directly visualize how an…
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…