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相关论文: Electric Transport Properties in the 2D-MoS2

200 篇论文

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K).…

材料科学 · 物理学 2016-12-01 Kirby K. H. Smithe , Chris D. English , Saurabh V. Suryavanshi , Eric Pop

Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the…

Electric conduction mechanisms are studied in the pressed nanoflake powder of the molybdenum-disulfide-oxide (MoSxOy) depending on their content and structure. The MoSxOy nanoflakes were prepared by reaction of (NH4)6Mo7O24 with thiourea in…

The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…

介观与纳米尺度物理 · 物理学 2019-06-11 Jianhong Xue , Shaoyun Huang , Ji-Yin Wang , H. Q. Xu

Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling…

介观与纳米尺度物理 · 物理学 2015-06-16 R. Thamankar , T. L. Yap , K. E. J. Goh , C. Troadec , C. Joachim

Electron transport properties in compacted VO2 nanopowders were studied. While VO2 usually exhibits a first-order metal-insulator transition (MIT) at ~340K, in our compressed nanopowder samples the MIT was significantly broadened due to…

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…

介观与纳米尺度物理 · 物理学 2014-07-10 Jing Wu , Hennrik Schmidt , Amara Kiran Kumar , Xiangfan Xu , Goki Eda , Barbaros Özyilmaz

Electronic and thermoelectric properties of a two-dimensional MoS2 monolayer containing atomic defects are investigated using density functional theory. All the atomic defects have been found to exhibit endothermic nature. Electronic…

介观与纳米尺度物理 · 物理学 2019-05-17 Munish Sharma , Ashok Kumar , P. K. Ahluwalia

The advances in the growth techniques provide numerous scope to explore the possibilities of new 2D materials for potential applications. With the aid of first-principle calculations we show that 2D Na can be a new addition to the family of…

材料科学 · 物理学 2019-08-08 Ajit Jena , Wu Li

We report on the fabrication and current-voltage (IV) characteristics of very narrow, strip-like arrays of metal nanoparticles. The arrays were formed from gold nanocrystals self-assembled between in-plane electrodes. Local cross-linking of…

介观与纳米尺度物理 · 物理学 2016-08-31 Klara Elteto , Xiao-Min Lin , Heinrich M. Jaeger

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport. In this work, we investigate…

介观与纳米尺度物理 · 物理学 2023-01-24 Armando Pezo , Matheus P. Lima , Marcio Costa , Adalberto Fazzio

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…

材料科学 · 物理学 2014-12-10 Jared H. Strait , Parinita Nene , Farhan Rana

Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage techniques. Analytical methods confirm the MoS_{2} layered…

材料科学 · 物理学 2019-07-19 M. Belete , S. Kataria , U. Koch , M. Kruth , C. Engelhard , J. Mayer , O. Engström , M. C. Lemme

We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$…

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

Single crystals of Na$_{0.5}$CoO$_2$ were obtained through a flux method followed by de-intercalation of sodium. The Na$_{0.5}$CoO$_2$ samples were found to be vulnerable to water in the air and a hydration process in which H$_2$O molecules…

强关联电子 · 物理学 2007-05-23 X. Z. Chen , Z. A. Xu , G. H. Cao , J. Q. Shen , L. M. Qiu , Z. H. Gan

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…

介观与纳米尺度物理 · 物理学 2015-06-12 Wenzhong Bao , Xinghan Cai , Dohun Kim , Karthik Sridhara , Michael S. Fuhrer

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect…

We have considered the conductivity properties of a two dimensional electron gas (2DEG) in two different kinds of inhomogeneous magnetic fields, i.e. a disordered distribution of magnetic flux vortices, and a periodic array of magnetic flux…

凝聚态物理 · 物理学 2009-10-22 Mads Nielsen , Per Hedegaard

We report experimental results of low temperature magnetotransport in high mobility 2D electron systems exposed to radiation up to 20GHz frequency using a simple dipole configuration. Magnetoresistance oscillations are observed as in…

介观与纳米尺度物理 · 物理学 2009-11-10 R. L. Willett , L. N. Pfeiffer , K. W. West
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