相关论文: Diode pumped silicate fiber for visible laser emis…

The bias-pumped gain-switched fiber laser proposed by us is considered a novel pulsed fiber laser based on a new pulsing mechanism. With a certain signal power seeding, synchronization of temporal evolution can be kept between the output…

Highly-doped holmium fibers have been prepared using modified chemical vapor deposition in combination with nanoparticle-doping method. Within a series of various Al2O3 and Ho3+ concentrations, relations between fibers composition and their…

A theoretical model for laser cooled continuous-wave fiber amplifier is presented. The amplification process takes place in the Tm3+-doped core of the fluoride ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF) glass fiber. The cooling process takes place in…

We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate…

We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94\mu m, using a graphene-based saturable absorber. The laser outputs 3.6ps pulses, with~0.4nJ energy and an amplitude fluctuation~0.5%, at 6.46MHz. This is a simple,…

We report on a mid-infrared mode-locked fiber laser that uses an acousto-optic tunable filter to achieve frequency-shifted feedback pulse generation with frequency tuning over a 215 nm range. The laser operates on the 3.5 ${\mu}$m…

A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…

A holmium-doped yttrium aluminum garnet (Ho:YAG) thin-disk was experimentally investigated under Q-switching and cavity-dumping operation schemes, pumped by a 1.9 $\mu$m laser-diode (LD). The laser generated pulses at 2090 nm with energies…

We propose and optimize theoretically a supercontinuum (SC) laser source in the mid-IR based on using As-Se-Te/As-S core/clad step-index fibers and a femtosecond all-fiber laser system at 2 {\mu}m. Numerically simulated spectra extending…

Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we…

3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and…

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through…

We report laser cooling of Yb3+-doped KY3F10 (Yb:KY3F10) driven by a 100-W, 1020-nm pump source. Despite pumping at a non-optimal wavelength, high-quality KY3F10 crystals doped with 3% and 7% Yb were cooled to 145 K and 151 K, respectively,…

A laser-diode-pumped intracavity frequency-doubled Nd:YAP/KTP laser is presented. Over 110 mw of TEM00 single-frequency output power at 540-nm wavelength was obtained. The output green laser was employed to pump a semimonolithic…

A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…

Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…

Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…

We propose and analyze theoretically a double magnetic plasmon resonance nanolaser, in which Ytterbium-erbium co-doped material is used as the gain medium. Through design of the double magnetic resonance modes, pumping light (980nm) can be…

Taking advantages of the broad emission bands of a Yb3+ doped calcium yttrium oxoborate (Yb:YCOB) crystal cut along the optimized direction out of principle planes with the maximum effective nonlinear coefficient, the self-frequency-doubled…

We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low…