基于Grafted AlGaAs/GeSn的光学泵浦激光器，可工作至130 K
光学
2024-09-17 v1 材料科学
摘要
IV族GeSn双异构结构（DHS）激光器具有直接带隙和CMOS兼容性等独特优势。然而，由于常规外延和晶圆键合中GeSn结面性能的限制，激光器性能的进一步提升受到了瓶颈。本文利用半导体锭接技术合成和表征了光学泵浦 ridge edge-emitting激光器（EEL），将AlGaAs纳米膜（NM）转印到生长于异质材料上的GeSn基片上，通过超薄Al2O3层实现界面。锭接AlGaAs/GeSn DHS激光器在77 K时的激光阈值为11.06 mW，最高激光温度可达130 K。这些结果凸显了锭接技术在增强载流子和光学场约束方面的潜力，为实现室温电注入GeSn激光器铺平了道路。
引用
@article{arxiv.2409.09752,
title = {Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K},
author = {Jie Zhou and Daniel Vincent and Sudip Acharya and Solomon Ojo and Alireza Abrand and Yang Liu and Jiarui Gong and Dong Liu and Samuel Haessly and Jianping Shen and Shining Xu and Yiran Li and Yi Lu and Hryhorii Stanchu and Luke Mawst and Bruce Claflin and Parsian K. Mohseni and Zhenqiang Ma and Shui-Qing Yu},
journal= {arXiv preprint arXiv:2409.09752},
year = {2024}
}
备注
5 pages, 5 figures. Supplementary Information included