相关论文: Enhanced GeSn Microdisk Lasers Directly Released o…
Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial.…
The surface-enhanced Raman scattering (SERS) signal from an AgFON plasmonic substrate, recoated with benzenethiol, was observed to increase by about 100% upon heating for 3.5 min at 100C and 1.5 min at 125C. The signal intensity was found…
In this article, we explore how cryogenic cooling of the Ti:sapphire laser crystal greatly reduces thermal lensing by over an order of magnitude because of two factors: (i) the increase in the thermal conductivity of the crystal, and (ii)…
We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets…
In this work, we try to understand the experimental thermoelectric (TE) properties of a ZrNiSn sample with DFT and semiclassical transport calculations using SCAN functional. SCAN and mBJ provide the same band gap $E_{g}$ of $\sim$0.54 eV.…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
The design, construction, and commissioning of a conduction-cooled Nb3Sn demonstration superconducting radio frequency (SRF) electron accelerator at the Institute of Modern Physics of the Chinese Academy of Sciences (IMP, CAS) will be…
Biaxial strain effects on electronic structures and thermoelectric properties of monolayer $\mathrm{PtTe_2}$ are investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for the electron part and GGA for…
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatible with silicon processing standards. These attributes make…
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable…
The quest to improve the thermoelectric figure of merit has mainly followed the roadmap of lowering the thermal conductivity while keeping unaltered the power factor of the material. Ideally an electron-crystal phonon-glass system is…
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the…
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The…
The question of whether static stress in fused silica relaxes at room temperature is still under debate. Here, we report experimental data investigating stress relaxation dynamics in fused silica at room temperature and up to 2 GPa stress…
In this paper, we report the theoretical investigation and experimental realization of a new spin-gapless semiconductor (SGSs) compound CoFeMnSn belonging to the family of quaternary Heusler alloys. Through the use of several ground-state…
At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance…
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from…
FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic…
Thermal noise is the predominant instability in the provision of ultrastable laser frequency, referencing to an optical cavity. Reducing the thermal-noise limit of a cavity means either making it larger to spread thermal fluctuations,…