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We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the…

介观与纳米尺度物理 · 物理学 2014-03-21 E. Pallecchi , F. Lafont , V. Cavaliere , F. Schopfer , D. Mailly , W. Poirier , A. Ouerghi

Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by…

材料科学 · 物理学 2020-06-22 D. Gogova , V. S. Olsen , C. Bazioti , I. -H. Lee , Ø. Prytz , L. Vines , A. Yu. Kuznetsov

In this first-principles study, we investigated the thermoelectric properties of the full-Heusler compound CsK$_2$Sb at different compressive strains. This material exhibits a valence band structure with significant effective mass…

材料科学 · 物理学 2025-05-14 Øven A. Grimenes , G. Jeffrey Snyder , Ole M. Løvvik , Kristian Berland

We report electron transport studies of a (001) GdN film grown on the square net presented by the (001) surface of LaAlO3, motivated by recent advances in epitaxial thin-film growth of several lanthanide nitrides. The film we have grown for…

材料科学 · 物理学 2025-02-05 Edward X. M. Trewick , B. J. Ruck , W. F. Holmes-Hewett , H. J. Trodahl

We have investigated the effect on phonon energy transport in mesoscopic systems and the reduction in the thermal conductance in the quantum limit due to phonon scattering by surface roughness using full 3-dimensional elasticity theory for…

介观与纳米尺度物理 · 物理学 2009-11-07 D. H. Santamore , M. C. Cross

In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most…

材料科学 · 物理学 2016-02-16 M. Amirabbasi , I. Abdolhosseini Sarsari

Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental…

The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are…

材料科学 · 物理学 2021-04-14 Alexander Y. Choi , Peishi Cheng , Benjamin Hatanpaa , Austin J. Minnich

Single walled carbon nanotubes (SWNT) have displayed a wealth of quantum transport phenomena thus far. Defect free, unperturbed SWNTs with wellbehaved or tunable metal contacts are important to probing the intrinsic electrical properties of…

介观与纳米尺度物理 · 物理学 2015-06-25 Jien Cao , Qian Wang , Hongjie Dai

We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent…

介观与纳米尺度物理 · 物理学 2017-06-28 Troels Markussen , Mattias Palsgaard , Daniele Stradi , Tue Gunst , Mads Brandbyge , Kurt Stokbro

Contrary to the common belief that electron-electron interaction (EEI) should be negligible in s-orbital-based conductors, we demonstrated that the EEI effect could play a significant role on electronic transport leading to the…

材料科学 · 物理学 2020-01-29 Jin Yue , Laxman R. Thoutam , Abhinav Prakash , Tianqi Wang , Bharat Jalan

We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis…

材料科学 · 物理学 2015-05-11 K. Kutorasinski , B. Wiendlocha , S. Kaprzyk , J. Tobola

We have systematically investigated the electrical transport properties of polycrystalline TaN$_x$ ($0.83$$\lesssim$$x$$\lesssim$1.32) films with rocksalt structure from 300 down to 2 K. It is found that the conductivity varies linearly…

介观与纳米尺度物理 · 物理学 2018-07-04 Ran Li , Xiu-Zhi Duan , Xin Zhu , Yang Yang , Ding-Bang Zhou , Zhi-Qing Li

We consider the problem of electron transport along a one-dimensional disordered multiple-scattering conductor, and study the electron density for all the electronic levels. A model is proposed for the reduced density matrix of the system…

无序系统与神经网络 · 物理学 2023-03-14 Gerardo Rivas , Miztli Yepez , Pier A. Mello

In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered…

介观与纳米尺度物理 · 物理学 2015-09-30 Manouchehr Hosseini , Mohammad Elahi , Mahdi Pourfath , David Esseni

Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…

介观与纳米尺度物理 · 物理学 2020-12-04 Sathwik Bharadwaj , Ashwin Ramasubramaniam , L. R. Ram-Mohan

We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates.…

材料科学 · 物理学 2009-11-07 X. J. Chen , S. Soltan , H. Zhang , H. -U. Habermeier

Recently, it has been found that crystalline tin selenide (SnSe) holds great potential as a thermoelectric material due to its ultralow thermal conductivity and moderate electronic transport performance. As thermoelectric application…

应用物理 · 物理学 2019-02-04 Shouhang Li , Zhen Tong , Hua Bao

High energy-resolution fluorescence-detected X-ray absorption spectroscopy and density functional theory calculations were used to investigate the local bonding and electronic structure of Sc in epitaxial wurtzite-structure…

材料科学 · 物理学 2014-05-20 S. M. Knoll , M. Rovezzi , S. Zhang , T. B. Joyce , M. A. Moram

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended…