相关论文: Optical microscopy-based thickness estimation in t…

When the thickness of the layer is smaller than the electrons mean free path, the morphology affects the conductivity directly based on the layer thickness. This issue provides basis in order to estimate the thickness of the layer by…

We present a robust, precise, and accurate method to simultaneously measure the refractive indices of two transparent materials within an interference coating. This is achieved by measuring both a photometrically accurate transmittance…

In this manuscript, we report the results of optical properties of SnS thin films, deposited on FTO coated glass substrates at room temperature by thermal evaporation technique. In addition, the effect of film thickness on the optical…

We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number…

We model the optical visibility of monolayer and bilayer graphene deposited on a silicon/silicon oxide substrate or thermally annealed on the surface of silicon carbide. We consider reflection and transmission setups, and find that…

Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical…

In this paper, a thin film thickness gauge based on the interferometric principle of Y-shaped optical fiber is proposed to achieve accurate measurement of film thickness. In this paper, the optical fiber, the interferometric principle and…

In semiconductor manufacturing processes, silicon dioxide films are commonly used as barrier layers, insulating layers, and protective layers. Coherence scanning interferometry (CSI) offers thin film thickness measurements with a…

Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices. In this article, we report how the optical, morphological,…

3R-MoS2, a MoS2 polytype with broken inversion symmetry, enables unique light-matter interactions and is promising for linear and nonlinear integrated photonics beyond the monolayer limit. Yet, systematic studies of its thickness-dependent…

We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical…

We measured the local composition and thickness of SiO2-based glass material from diffraction. By using four dimensional scanning transmission electron microscopy (4D-STEM), we obtained diffraction at each scanning point. Comparing the…

We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the…

Precise measurements of the geometrical thickness of a sample and its refractive index are important for materials science, engineering, and medical diagnosis. Among the possible non-contact evaluation methods, optical interferometric…

The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…

We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled…

We show that measured optical transmittance of an ultra thin gas depends on the detector size. To this end we conducted an experiment that compares transmittances measured in parallel with a pair of detectors with different diameters…

Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…

The Optical Properties of Astronomical Silicates with Infrared Techniques (OPASI-T) program utilizes multiple instruments to provide spectral data over a wide range of temperature and wavelengths. Experimental methods include Vector Network…

The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…