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We study the electronic structure and topological properties of monolayer and ABC-stacked multilayer of graphyne-$N$, which are a family of planar carbon sheets consisting of $sp$ and $sp_2$-bonding. By using the density-functional theory…

介观与纳米尺度物理 · 物理学 2020-09-24 Takuto Kawakami , Takafumi Nomura , Mikito Koshino

Td-WTe2 is a topological Weyl semimetal. WTe2 in the orthorhombic structure is stable at room temperature. Elastic, electronic, bonding, and optoelectronic properties of WTe2 have been investigated in detail in this work using the density…

材料科学 · 物理学 2020-12-01 B. Rahman Rano , Ishtiaque M. Syed , S. H. Naqib

In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the…

介观与纳米尺度物理 · 物理学 2021-07-01 F. Ferreira , V. V. Enaldiev , V. I. Fal'ko , S. J. Magorrian

Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these…

Transition metal dichalcogenide (TMD) moir\'e bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved…

The electronic state of WTe2, a candidate of type-II Weyl semimetal, is investigated by using laser-based spin- and angle-resolved photoemission spectroscopy (SARPES). We prepare the pair of WTe2 samples, one with (001) surface and the…

Successful synthesis of the nitrogenated holey two-dimensional structures C2N (Nat. Commun. 2015, 6, 1-7) using simply wet-chemical reaction offer a cost-effective way to generate other 2D materials with novel optical and electronic…

材料科学 · 物理学 2015-05-12 Ruiqi Zhang , Bin Li , Jinlong Yang

Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of atomic registries at the twist interface does not favor the…

介观与纳米尺度物理 · 物理学 2023-01-06 Liheng An , Zishu Zhou , Xuemeng Feng , Meizhen Huang , Xiangbin Cai , Yong Chen , Pei Zhao , Xi Dai , Jingdi Zhang , Wang Yao , Junwei Liu , Ning Wang

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin…

We show that in some transition metal dichalcogenides, minority regions of the cleaved sample surfaces show - unexpectedly and anomalously - a finite number of 2D electronic states instead of the expected 3D valence bands. In the case of…

强关联电子 · 物理学 2024-07-01 Matthew D. Watson , Mihir Date , Alex Louat , Niels B. M. Schröter

The recent discovery of non-saturating giant positive magnetoresistance in Td-WTe2 has aroused great interest in this material. We have studied the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2…

We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the…

We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity…

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in…

介观与纳米尺度物理 · 物理学 2018-06-12 Daniel Walkup , Badih Assaf , Kane L Scipioni , R. Sankar , Fangcheng Chou , Guoqing Chang , Hsin Lin , Ilija Zeljkovic , Vidya Madhavan

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as…

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and…

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

Based on the ab initio calculations, we show that MoTe2, in its low-temperature orthorhombic structure characterized by an X-ray diffraction study at 100 K, realizes 4 type-II Weyl points between the N-th and N+1-th bands, where N is the…

Two-dimensional (2D) materials are among the most studied ones nowadays, because of their unique properties. These materials are made of, single- or few atom-thick layers assembled by van der Waals forces, hence allowing a variety of…

介观与纳米尺度物理 · 物理学 2020-12-17 Pascal Puech , Iann Gerber , Fabrice Piazza , Marc Monthioux

We study the electronic structure of multilayer graphenes with a mixture of Bernal and rhombohedral stacking and propose a general scheme to understand the electronic band structure of an arbitrary configuration. The system can be viewed as…

介观与纳米尺度物理 · 物理学 2015-06-12 Mikito Koshino , Edward McCann