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We study the electron/hole transport in puddle-disordered and rough graphene samples which are subject to in-plane magnetic fields. Previous treatments, mostly devoted to regimes where the electron/hole scattering wavelengths are larger…

介观与纳米尺度物理 · 物理学 2015-04-15 R. R. Brandão , L. Moriconi

We investigate the addition spectrum of a graphene quantum dot in the vicinity of the electron-hole crossover as a function of perpendicular magnetic field. Coulomb blockade resonances of the 50 nm wide dot are visible at all gate voltages…

材料科学 · 物理学 2009-08-04 J. Guettinger , C. Stampfer , F. Libisch , T. Frey , J. Burgdoerfer , T. Ihn , K. Ensslin

We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…

介观与纳米尺度物理 · 物理学 2015-03-20 Bitan Roy , Zi-Xiang Hu , Kun Yang

We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…

The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of $e^2/h$, has been the first fascinating manifestation of the…

介观与纳米尺度物理 · 物理学 2017-01-10 Alessandro Cresti , Branislav K. Nikolić , Jose Hugo García , Stephan Roche

We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity for zero gate voltage. We provide detailed analysis on the resulting spatially…

介观与纳米尺度物理 · 物理学 2017-03-15 M. N. Najafi , M. Ghasemi Nezhadhaghighi

We have investigated a new feature of impurity cyclotron resonances common to various localized potentials of graphene. A localized potential can interact with a magnetic field in an unexpected way in graphene. It can lead to formation of…

介观与纳米尺度物理 · 物理学 2014-07-25 S. C. Kim , S. -R. Eric Yang , A. H. MacDonald

We investigate electronic transport through a graphene $n$-$p$ junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2…

介观与纳米尺度物理 · 物理学 2018-07-30 Qianfan Ma , François D. Parmentier , Preden Roulleau , Geneviève Fleury

Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…

介观与纳米尺度物理 · 物理学 2010-03-09 D. A. Abanin , I. Skachko , X. Du , E. Y. Andrei , L. S. Levitov

We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…

介观与纳米尺度物理 · 物理学 2013-08-01 D. Kölbl , D. M. Zumbühl

We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observed a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a…

介观与纳米尺度物理 · 物理学 2009-11-13 Z. Q. Li , E. A. Henriksen , Z. Jiang , Z. Hao , M. C. Martin , P. Kim , H. L. Stormer , D. N. Basov

Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of…

介观与纳米尺度物理 · 物理学 2013-09-10 Benjamin E. Feldman , Andrei J. Levin , Benjamin Krauss , Dmitry Abanin , Bertrand. I. Halperin , Jurgen H. Smet , Amir Yacoby

Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its…

介观与纳米尺度物理 · 物理学 2024-11-22 Arseny Gribachov , Vladimir Vyurkov , Dmitry Svintsov

We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field.…

介观与纳米尺度物理 · 物理学 2009-11-19 J. Guettinger , C. Stampfer , T. Frey , T. Ihn , K. Ensslin

We consider hydrodynamic electron transport in the Hall-bar geometry. The theory is developed for systems with non-Galilean-invariant electron liquids. We show that inhomogeneity of the electron density induced by long-range disorder and…

介观与纳米尺度物理 · 物理学 2022-04-27 Songci Li , A. V. Andreev , Alex Levchenko

Motivated by recent advances in fabricating graphene nanostructures, we find that an electron can be trapped in Z-shaped graphene nanoconstriction with zigzag edges. The central section of the constriction operates as a single-level quantum…

介观与纳米尺度物理 · 物理学 2010-09-23 Adam Rycerz

Aharonov-Bohm interferences in the quantum Hall regime are observed when electrons are transmitted between two edge channels. Such a phenomenon has been realized in 2D systems such as quantum point contacts, anti-dots and p-n junctions.…

介观与纳米尺度物理 · 物理学 2019-07-26 Viet Hung Nguyen , Jean-Christophe Charlier

We simulate a hybrid superconductor-graphene device in the quantum Hall regime to identify the origin of downstream resistance oscillations in a recent experiment [Zhao et. al. Nature Physics 16, (2020)]. In addition to the previously…

介观与纳米尺度物理 · 物理学 2022-12-16 Antonio L. R. Manesco , Ian Matthias Flór , Chun-Xiao Liu , Anton R. Akhmerov

Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…

介观与纳米尺度物理 · 物理学 2017-04-26 M. D. Petrović , F. M. Peeters

We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…

介观与纳米尺度物理 · 物理学 2013-12-06 Andrea Iagallo , Shinichi Tanabe , Stefano Roddaro , Makoto Takamura , Hiroki Hibino , Stefan Heun