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The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…

介观与纳米尺度物理 · 物理学 2017-07-14 Jieun Lee , Kin Fai Mak , Jie Shan

Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…

介观与纳米尺度物理 · 物理学 2015-06-19 Kin Fai Mak , Kathryn L. McGill , Jiwoong Park , Paul L. McEuen

Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure…

材料科学 · 物理学 2025-11-11 Vivek Chowdhury , Ahmed Zubair

Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the…

介观与纳米尺度物理 · 物理学 2020-01-17 Sean M. Oliver , Joshua Young , Sergiy Krylyuk , Thomas L. Reinecke , Albert V. Davydov , Patrick M. Vora

A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this…

材料科学 · 物理学 2012-10-19 Ting Cao , Ji Feng , Junren Shi , Qian Niu , Enge Wang

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…

材料科学 · 物理学 2017-01-04 Wen-Yi Tong , Shi-Jing Gong , Xiangang Wan , Chun-Gang Duan

Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below…

介观与纳米尺度物理 · 物理学 2022-02-25 Xintong Li , Zhida Liu , Yihan Liu , Suyogya Karki , Xiaoqin Li , Deji Akinwande , Jean Anne C. Incorvia

For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-dependent effective magnetic field. In addition to monolayer…

介观与纳米尺度物理 · 物理学 2019-04-23 Zumeng Huang , Yuanda Liu , Kévin Dini , Zhuojun Liu , Hanlin Fang , Jin Liu , Timothy Liew , Weibo Gao

We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…

Valleytronics harnesses the valley degree of freedom -- energy-degenerate extrema in the electronic band structure -- for information storage and processing. Valley Hall effect (VHE) is a cornerstone of valleytronics, enabling electric…

介观与纳米尺度物理 · 物理学 2026-03-17 Jin Cao , Shen Lai , Cong Xiao , Qian Niu , Shengyuan A. Yang

Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a…

In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…

材料科学 · 物理学 2024-09-11 Hanbo Sun , Yewei Ren , Chao Wu , Pengqiang Dong , Weixi Zhang , Yin-Zhong Wu , Ping Li

The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…

介观与纳米尺度物理 · 物理学 2025-03-06 Pan He , Min Zhang , Jin Cao , Jingru Li , Hao Liu , Jinfeng Zhai , Ruibo Wang , Cong Xiao , Shengyuan A. Yang , Jian Shen

Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…

介观与纳米尺度物理 · 物理学 2018-08-27 Tong Zhou , Jiayong Zhang , Hua Jiang , Igor Zutic , Zhongqin Yang

The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…

介观与纳米尺度物理 · 物理学 2019-04-23 Terry Y. T. Hung , Kerem Y. Camsari , Shengjiao Zhang , Pramey Upadhyaya , Zhihong Chen

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent…

A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…

介观与纳米尺度物理 · 物理学 2023-06-09 Zhou Li , J. P. Carbotte

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons…

Moir\'e superlattices created by stacking atomic layers of transition metal dichalcogenide semiconductors have emerged as a class of fascinating artificial photonic and electronic materials. An appealing attribute of these structures is the…

介观与纳米尺度物理 · 物理学 2025-03-11 Yueh-Chun Wu , Matthew DeCapua , ZhongChen Xu , Takashi Taniguchi , Kenji Watanabe , YouGuo Shi , Jun Yan

Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and…

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