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Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device…

We have demonstrated, for the first time to our knowledge, self-injection locking of a distributed feedback (DFB) diode laser to a multimode 4H-silicon carbide (4H-SiC) microring resonator, and observed resonant opto-mechanical oscillation…

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date…

We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal…

This paper reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) utilizing 30% Scandium-doped Aluminum Nitride on Silicon Carbide, operating near 16 GHz. Experimental results show mechanical quality factors up to 380,…

应用物理 · 物理学 2025-05-21 Luca Spagnuolo , Luca Colombo , Kapil Saha , Gabriel Giribaldi , Pietro Simeoni , Matteo Rinaldi

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…

The quality factor of a mechanical resonator is an important figure of merit for various sensing applications and for observing quantum behavior. Here, we demonstrate a technique to push the quality factor of a micro-mechanical resonator…

介观与纳米尺度物理 · 物理学 2012-05-29 K. -K. Ni , R. Norte , D. J. Wilson , J. D. Hood , D. E. Chang , O. Painter , H. J. Kimble

We report disk-shaped silicon optomechanical resonators with frequency up to 1.75 GHz in the ultrahigh frequency band. Optical transduction of the thermal motion of the disks' in-plane vibrational modes yields a displacement sensitivity of…

光学 · 物理学 2012-06-20 Xiankai Sun , Xufeng Zhang , Hong X. Tang

Cubic silicon-carbide crystals (3C-SiC), known for their high thermal conductivity and in-plane stress, hold significant promise for the development of high-quality ($Q$) mechanical oscillators. We reveal degeneracy-breaking phenomena in…

量子物理 · 物理学 2025-02-12 Yulong Liu , Huanying Sun , Qichun Liu , Haihua Wu , Mika A. Sillanpää , Tiefu Li

Guided phonons have become an increasingly important platform for classical and quantum information processing. While conventional surface acoustic wave systems are typically only guided in the vertical direction, two-dimensionally confined…

Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…

We demonstrate frequency conversion by four wave mixing at telecommunication wavelengths using an integrated platform in 3C SiC. The process was enhanced by high-Q and small modal volume ring resonators, allowing the use of mW-level CW…

光学 · 物理学 2018-08-01 Francesco Martini , Alberto Politi

4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is…

We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…

光学 · 物理学 2015-06-15 Yuxiang Liu , Marcelo Davanco , Vladimir Aksyuk , Kartik Srinivasan

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

材料科学 · 物理学 2021-08-04 A. Csóré , N. T. Son , A. Gali

The semicylindrical microresonator with relatively simple excitation with a plane wave is studied. The resonator is formed on the base of the dielectric/metal/dielectric structure, where the wave energy penetrates into resonator through a…

This report presents a robust composite resonator known as the high overtone bulk acoustic wave resonator (HBAR) for demonstrating experimentally the ability of the resonator to tune the envelope of the spectrum by applying dc bias. The…

应用物理 · 物理学 2018-08-31 Kongbrailatpam Sandeep , J Pundareekam Goud , K. C. James Raju

Dielectric metasurfaces supporting quasi-bound states in the continuum (qBICs) enable high field enhancement with narrow-linewidth resonances in the visible and near-infrared ranges. The resonance emerges when distorting the meta-atom's…

Bound states in the continuum (BICs) represent localized modes with energies embedded in the continuous spectrum of radiating waves. BICs were discovered initially as a mathematical curiosity in quantum mechanics, and more recently were…