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In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…

应用物理 · 物理学 2021-09-01 Giovanni Nastasi , Vittorio Romano

The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at…

介观与纳米尺度物理 · 物理学 2011-12-19 Gennady I. Zebrev , Alexander A. Tselykovskiy , Daria K. Batmanova , Evgeny V. Melnik

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

This review on graphene, a one atom thick, two-dimensional sheet of carbon atoms, starts with a general description of the graphene electronic structure as well as a basic experimental toolkit for identifying and handling this material.…

材料科学 · 物理学 2010-11-22 Caterina Soldano , Ather Mahmood , Erik Dujardin

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

材料科学 · 物理学 2013-04-26 Kosuke Nagashio , Akira Toriumi

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…

We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…

介观与纳米尺度物理 · 物理学 2015-06-03 Guanxiong Liu , Sergey Rumyantsev , Michael Shur , Alexander A. Balandin

Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for sensing. Its biocompatible, flexible, and chemically inert nature associated to the…

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous…

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…

介观与纳米尺度物理 · 物理学 2021-07-22 Mohamed Warda , Khodr Badih

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is…

介观与纳米尺度物理 · 物理学 2013-09-30 Nojoon Myoung , Kyungchul Seo , Seung Joo Lee , Gukhyung Ihm

In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility…

介观与纳米尺度物理 · 物理学 2016-01-05 Antonio Di Bartolomeo

Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…

介观与纳米尺度物理 · 物理学 2023-10-30 Mathieu Luisier , Cedric Klinkert , Sara Fiore , Jonathan Backman , Youseung Lee , Christian Stieger , Áron Szabó

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

介观与纳米尺度物理 · 物理学 2009-11-13 Y. Q. Wu , P. D. Ye , M. A. Capano , Y. Xuan , Y. Sui , M. Qi , J. A. Cooper

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device.…

介观与纳米尺度物理 · 物理学 2021-10-12 Aniello Pelella , Alessandro Grillo , Enver Faella , Giuseppe Luongo , Mohammad Bagher Askari , Antonio Di Bartolomeo

Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of…

Since last decade, graphene has materialized itself as one of the phenomenal materials to modern researchers because of its remarkable thermal, optical, electronic, and mechanical properties. Graphene holds enormous potentials for lab on…

应用物理 · 物理学 2019-10-11 Joydip Sengupta , Chaudhery Mustansar Hussain

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in…

材料科学 · 物理学 2014-06-04 F. V. Kusmartsev , W. M. Wu , M. P. Pierpoint , K. C. Yung