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相关论文: Electronic structure of InAs and InSb surfaces: de…

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In this paper, we provide a comprehensive theoretical analysis of the electronic structure of InAs(111) surfaces with a special attention paid to the energy region close to the fundamental bandgap. Starting from the bulk electronic…

材料科学 · 物理学 2021-03-05 Ivan Vrubel , Dmitry Yudin , Anastasiia Pervishko

The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a…

材料科学 · 物理学 2007-05-23 X. Lopez-Lozano , Cecilia Noguez , L. Meza-Montes

The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We describe and discuss the electronic character of the surface…

材料科学 · 物理学 2007-05-23 X. Lopez-Lozano , Cecilia Noguez , L. Meza-Montes

The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3)…

This study presents a refined approach to computing the electronic structure of indium antimonide (InSb) using advanced \textit{ab initio} techniques with the In and Sb $4d^{10}$ semicore electrons included in the valence states. These…

材料科学 · 物理学 2025-08-04 Ritwik Das , Anne-Sophie Grimault-Jacquin , Frédéric Aniel

The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojunctions using a combination of density functional theory…

介观与纳米尺度物理 · 物理学 2024-11-06 H. Ness , F. Corsetti , D. Pashov , B. Verstichel , G. W. Winkler , M. van Schilfgaarde , R. M. Lutchyn

We report comprehensive study of physical properties of the binary superconductor compound SnAs. The electronic band structure of SnAs was investigated using both angle-resolved photoemission spectroscopy (ARPES) in a wide binding energy…

High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited…

材料科学 · 物理学 2026-03-10 Zijin Lei , Yuze Wu , Christian Reichl , Stefan Fält , Werner Wegscheider

We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of…

材料科学 · 物理学 2019-01-30 Atanu Patra , Monodeep Chakraborty , Anushree Roy

The topology and spin-orbital polarization of two-dimensional (2D) surface electronic states have been extensively studied in this decade. One major interest in them is their close relationship with the parities of the bulk (3D) electronic…

Photoemission (PES) and inverse-photoemission spectra (IPES) for the sulphur-passivated InP(001) surface are compared with theoretical predictions based on density-functional calculations. As a test case for our methods, we also present a…

凝聚态物理 · 物理学 2009-10-30 M. W. C. Dharma-wardana , Z. Tian , Z. H. Lu , L. J. Lewis

We present ab initio local-density-functional electronic structure calculations for the (111) and (-1-1-1) surfaces of cubic BN. The energetically stable reconstructions, namely the N adatom, N3 triangle models on the (111), the (2x1),…

材料科学 · 物理学 2009-10-31 Krisztina Kadas , Georg Kern , Jurgen Hafner

We investigated the stable silicon (113) surface with a 3x2ADI reconstruction by ab-initio methods. The ground state properties have been obtained using the density-functional theory. We present the dispersion of the electronic band…

材料科学 · 物理学 2009-11-11 Katalin Gaal-Nagy , Giovanni Onida

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in…

材料科学 · 物理学 2023-10-31 H. Lohani , P. Mishra , A. Banerjee , K. Majhi , R. Ganesan , U. Manju , D. Topwal , P. S. Anil Kumar , B. R. Sekhar

The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$…

The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is…

The correlated electronic structure of the submonolayer surface systems Sn/Si(111) and Sn/Ge(111) is investigated by density-functional theory (DFT) and its combination with explicit many-body methods. Namely, the dynamical mean-field…

材料科学 · 物理学 2015-03-13 Sergej Schuwalow , Daniel Grieger , Frank Lechermann

We use angle-resolved photoemission to study the three dimensional (3D) electronic structure of Co pnictides ACo2As2 with A=Ba, Sr, Ca or a mixture of Sr and Ca. These compounds are isostructural to Fe based superconductors, but have one…

X-ray absorption spectroscopy yields direct access to the electronic and geometric structure of hybrid inorganic-organic interfaces formed upon adsorption of complex molecules at metal surfaces. The unambiguous interpretation of…

化学物理 · 物理学 2017-06-19 Katharina Diller , Reinhard J. Maurer , Moritz Müller , Karsten Reuter

First-principles simulations of electronic properties of hybrid inorganic/organic interfaces are challenging, as common density-functional theory (DFT) approximations target specific material classes like bulk semiconductors or gas-phase…

材料科学 · 物理学 2023-02-13 Jannis Krumland , Caterina Cocchi
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