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Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…

介观与纳米尺度物理 · 物理学 2025-11-11 Debottam Daw , Houcine Bouzid , Sung-Gyu Lee , Wujoon Cha , Ki Kang Kim , Min-kyu Joo , Yan Wang , Manish Chhowalla , Young Hee Lee

We study the temperature-dependent corrections to the conductance due to electron-electron (e-e) interactions in clean two-dimensional conductors, such as lightly doped graphene or other Dirac matter. We use semiclassical Boltzmann kinetic…

介观与纳米尺度物理 · 物理学 2018-08-01 A. Uzair , K. Sabeeh , Markus Mueller

Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. In analogy to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically…

应用物理 · 物理学 2021-03-02 Jiewei Chen , Ting Zhang , Jingli Wang , Ning Zhang , Wei Ji , Shuyun Zhou , Yang Chai

Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…

材料科学 · 物理学 2024-04-15 Chenmu Zhang , Yuanyue Liu

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…

Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological…

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…

A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…

介观与纳米尺度物理 · 物理学 2016-05-04 A. M. Korolev , V. M. Shulga , O. G. Turutanov , V. I. Shnyrkov

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…

We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…

The hydrodynamic regime of electron transport has been recently realized in conductors with ultra-low densities of defects. Although relaxation processes in two-dimensional (2D) fluids have been studied in many theoretical works, the…

介观与纳米尺度物理 · 物理学 2021-01-04 P. S. Alekseev , A. P. Dmitriev

Two-dimensional (2D) transition metal nitrides have a wide prospect of applications in the fields of physics, chemistry, materials, etc. However, 2D transition metal nitrides with strong magnetism, especially high N$\rm \acute{e}$el…

材料科学 · 物理学 2025-03-18 Lujia Tian , Lihui Han , Yuanfang Yue , Huazhen Li , Z. Y. Xie , Xun-Wang Yan

We study the temperature dependence ($77$ K - $475$ K) of the longitudinal resistivity and Hall coefficient of thin films (thickness $20$ nm) of three dimensional topological Dirac semimetal Na$_3$Bi grown via molecular beam epitaxy (MBE).…

材料科学 · 物理学 2017-12-20 Chang Liu , Jack Hellerstedt , Mark T. Edmonds , Michael S. Fuhrer

Diffusion currents are theoretically examined in two-dimensional Dirac materials, such as those of the transition metal dichalcogenides (TMD) family. The transversal effects are analogues of the valley Hall (VHE) and photogalvanic (PGE)…

介观与纳米尺度物理 · 物理学 2023-03-01 A. V. Snegirev , V. M. Kovalev , M. V. Entin

Electron spectrum of 2D and 3D antiferromagnetic metals is calculated with account of spin-fluctuation corrections within perturbation theory in the s-f exchange model. Effects of the interaction of conduction electrons with spin waves in…

强关联电子 · 物理学 2009-10-31 V. Yu. Irkhin , M. I. Katsnelson

In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source…

介观与纳米尺度物理 · 物理学 2009-11-13 G. Giusi , G. Iannaccone , M. Mohamed , U. Ravaioli

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room…

材料科学 · 物理学 2019-09-11 Sheng-Ying Yue , Runqing Yang , Bolin Liao

Optical measurements and band structure calculations are reported on 3D Dirac materials. The electronic properties associated with the Dirac cone are identified in the reflectivity spectra of Cd$_3$As$_2$ and Na$_3$Bi single crystals. In…