相关论文: Laser Processing For 3D Junctionless Transistor Fa…

This paper describes a novel integrated circuit technology to manufacture high-density thermoelectric devices on a semiconductor wafer. With no moving parts, a thermoelectric cooler operates quietly, allows cooling below ambient…

We present a novel method to fabricate low bend loss femtosecond-laser written waveguides that exploits the differential thermal stabilities of laser induced refractive index modifications. The technique consists of a two-step process; the…

In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to…

Thin-film periodically poled lithium niobate (TF-PPLN) devices have recently gained prominence for efficient wavelength conversion processes in both classical and quantum applications. However, the patterning and poling of TF-PPLN devices…

Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed…

Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin…

We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with…

The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic…

The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

Thermoreflectance methods by picosecond pulse heating and by nanosecond pulse heating have been developed under the same geometrical configuration as the laser flash method by the National Metrology Institute of JAPAN, AIST. Using these…

We report a self-aligned, monolithic electron interferometer, consisting of two 45 nm thick silicon layers separated by 20 $\mu$m. This interferometer was fabricated from a single crystal silicon cantilever on a transmission electron…

Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation…

We report the first observation of a superconducting transition in a 3D printed, metallised-plastic device. A cylindrical cavity is 3D printed from a photosensitive polymer resin and then a 20 $\mu$m layer of tin deposited. A resonant TE…

We have developed a novel fabrication process for ultra-small, full-epitaxial NbN Josephson junctions on a silicon (Si) substrate. A full-epitaxial NbN/AlN/NbN tri-layer was grown on a Si (100) wafer with a (200)-oriented TiN buffer layer.…

FeSex (x = 0.80, 0.84, 0.88, 0.92) thin films were prepared on SrTiO3(001) (STO), (La,Sr)(Al,Ta)O3(001) (LSAT), and LaAlO3(001) (LAO) substrates by pulsed laser deposition method. All thin films show single-phase and c-axis oriented…

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high…

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…

We demonstrate a novel, composite laser written 3D waveguide, fabricated in boro-aluminosilicate glass, with a refractive index contrast of 1.12 x 10^-2. The waveguide is fabricated using a multi-pass approach which leverages the respective…