相关论文: In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al N…

Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental…

In this PhD thesis, quantum devices based on molecular-beam epitaxy grown InAs semiconductor with an in-situ grown epitaxial Al film were investigated. Novel device geometries were realized that allow for the study of bound states that…

Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this…

Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D…

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500…

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…

We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. Our approach takes into account on equal footing important key ingredients: proximity-induced superconductivity, orbital and Zeeman effect…

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires…

With the recent achievement of extremely high-quality epitaxial interfaces between InAs nanowires and superconducting Al shells with strong superconductor-semiconductor tunnel coupling, a new regime of proximity-induced superconductivity in…

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs…

GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatible with silicon processing standards. These attributes make…

We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a…

Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems…

Full-shell nanowires (semiconducting nanowires fully coated with a superconducting shell) have been recently presented as a novel means to create Majorana zero modes. In contrast to partially coated nanowires, it has been argued that…

We demonstrate a topotactic transformation of zincblende InAs(Sb) nanowires into the Zintl phase Eu$_5$In$_2$As$_6$ through a vapor-solid mutual exchange process involving Eu and In in molecular beam epitaxy. This conversion preserves the…

InAs/GaSb double quantum wells (QWs) separated by a 100 \AA\ AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs $[E_f^s(\rm InAs)]$…

We use the effective g-factor of subgap states, g*, in hybrid InAs nanowires with an epitaxial Al shell to investigate how the superconducting density of states is distributed between the semiconductor core and the metallic shell. We find a…

(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental…

Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental…

III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…