相关论文: In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al N…
Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding…
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility…
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological…
We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centred crystal structure…
Following significant progress in the visualization and characterization of hybrid superconducting-semiconducting systems, greatly propelled by reports of Majorana zero modes in nanowire devices, considerable attention has been devoted to…
Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and…
Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize…
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…
One-dimensional (1D) electronic transport and induced superconductivity in semiconductor nano-structures are crucial ingredients to realize topological superconductivity. Our approach for topological superconductivity employs a…
We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$…
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network…
In 2021 Nature Physics published a paper by Vaitiekenas, Liu, Krogstrup and Marcus titled "Zero-bias peaks at zero magnetic field in ferromagnetic hybrid nanowires". The paper reports low temperature transport measurements on semiconductor…
We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are…
Hybrid semiconducting nanowire devices combining epitaxial superconductor and ferromagnetic insulator layers have been recently explored experimentally as an alternative platform for topological superconductivity at zero applied magnetic…
The large Land\'{e} g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…