中文

面内选择性区域InSb-Al纳米线量子网络

介观与纳米尺度物理 2021-03-12 v1

摘要

强自旋轨道半导体纳米线与超导体耦合被预言可承载Majorana零模。Majorana模的交换(编织)操作构成拓扑量子计算机的逻辑门,并需要纳米线网络。在此,我们开发了具有优异量子输运特性的InSb-Al半导体-超导体纳米线网络的面内选择性区域生长技术。在绝缘但严重失配的InP衬底上,通过1)在(111)B衬底取向下纳米线/衬底界面处晶格失配的完全弛豫,2)由单一成核点完成完整网络的成核(通过优化吸附原子的表面扩散长度实现),实现了InSb纳米线网络中无缺陷输运通道。在这些结构中展示了拓扑量子计算的关键量子输运现象,包括长达10 μ\mum的相位相干输运,以及伴随2e2e周期库仑振荡的硬超导能隙(由集成于纳米线网络中的Al基Cooper对岛产生)。

关键词

引用

@article{arxiv.2103.06793,
  title  = {In-plane selective area InSb-Al nanowire quantum networks},
  author = {Roy L. M. Op het Veld and Di Xu and Vanessa Schaller and Marcel A. Verheijen and Stan M. E. Peters and Jason Jung and Chuyao Tong and Qingzhen Wang and Michiel W. A. de Moor and Bart Hesselmann and Kiefer Vermeulen and Jouri D. S. Bommer and Joon Sue Lee and Andrey Sarikov and Mihir Pendharkar and Anna Marzegalli and Sebastian Koelling and Leo P. Kouwenhoven and Leo Miglio and Chris J. Palmstrøm and Hao Zhang and Erik P. A. M. Bakkers},
  journal= {arXiv preprint arXiv:2103.06793},
  year   = {2021}
}

备注

Data repository is available at https://doi.org/10.5281/zenodo.4589484 . Author version of the text before peer review, while see DOI for the published version