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Computational materials are pivotal in advancing our understanding of distinct material classes and their properties, offering valuable insights in predicting novel structures and complementing experimental approaches. In this context,…

材料科学 · 物理学 2023-10-12 F. F. Monteiro , K. A. L. Lima , L. A. Ribeiro Junior

Low frequency 1/f noise is investigated in graphene, encapsulated between hexagonal boron nitride (hBN) substrate in dual gated geometry. The overall noise magnitude is smaller as compared to graphene on Si/SiO2 substrate. The noise…

介观与纳米尺度物理 · 物理学 2021-12-15 Chandan Kumar , Anindya Das

We performed calculations of electronic, optical and transport properties of graphene on hBN with realistic moir\'e patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be…

介观与纳米尺度物理 · 物理学 2015-11-05 G. J. Slotman , M. M. van Wijk , Pei-Liang Zhao , A. Fasolino , M. I. Katsnelson , Shengjun Yuan

We present a comprehensive first-principles investigation of the structural, electronic, and vibrational properties of four layered boron nitride (BN) polymorphs--AA-stacked ($e$-BN), AA$^\prime$-stacked ($h$-BN), ABC-stacked ($r$-BN), and…

材料科学 · 物理学 2025-05-23 Priyanka Mishra , Nevill Gonzalez Szwacki

Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle…

材料科学 · 物理学 2020-07-29 Yabei Wu , Weiyi Xia , Yubo Zhang , Wenguang Zhu , Wenqing Zhang , Peihong Zhang

Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and…

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion…

介观与纳米尺度物理 · 物理学 2011-12-14 B. Sachs , T. O. Wehling , M. I. Katsnelson , A. I. Lichtenstein

A periodic spatial modulation, as created by a moir\'e pattern, has been extensively studied with the view to engineer and tune the properties of graphene. Graphene encapsulated by hexagonal boron nitride (hBN) when slightly misaligned with…

介观与纳米尺度物理 · 物理学 2020-01-31 M. Anđelković , S. P. Milovanović , L. Covaci , F. M. Peeters

The interplay between substrate interactions and electron-phonon coupling in two-dimensional (2D) materials presents a significant challenge in understanding and controlling their electronic properties. Here, we present a comparative study…

材料科学 · 物理学 2025-01-15 Amjad Al Taleb , Wen Wan , Giorgio Benedek , Miguel M. Ugeda , Daniel Farías

Successful synthesis of the nitrogenated holey two-dimensional structures C2N (Nat. Commun. 2015, 6, 1-7) using simply wet-chemical reaction offer a cost-effective way to generate other 2D materials with novel optical and electronic…

材料科学 · 物理学 2015-05-12 Ruiqi Zhang , Bin Li , Jinlong Yang

The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron…

介观与纳米尺度物理 · 物理学 2012-03-23 J. Velasco , L. Jing , W. Bao , Y. Lee , P. Kratz , V. Aji , M. Bockrath , C. N. Lau , C. Varma , R. Stillwell , D. Smirnov , Fan Zhang , J. Jung , A. H. MacDonald

Substitutional carbon defects in hexagonal boron nitride (hBN) are prominent single photon emitters (SPEs), and their potential for spin activity ($S\geq1$) is particularly intriguing. While studies have largely focused on intra-layer…

材料科学 · 物理学 2025-06-03 Ignacio Chacon , Andrea Echeverri , Carlos Cardenas , Francisco Munoz

We have predicted a new phase of nitrogen with octagon structure in our previous study, which we referred to as octa-nitrogene (ON). In this work, we make further investigation on its electronic structure. The phonon band structure has no…

材料科学 · 物理学 2018-01-29 Wanxing Lin , Jiesen Li , Weiliang Wang , Shi-Dong Liang , Dao-Xin Yao

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…

介观与纳米尺度物理 · 物理学 2007-11-26 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on…

Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence…

A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable…

材料科学 · 物理学 2012-08-02 Yuanyue Liu , Xiaolong Zou , Boris I. Yakobson

The electronic and structural properties of Janus MoSSe/MoX$_2$ (X=S,Se) in-plane heterojunctions, endowed with single-atom vacancies, were studied using density functional theory calculations. The stability of these structures was verified…

We perform ab initio calculations that indicate that the relative stability of antiphase boundaries (APB) with armchair and zigzag chiralities in monolayer boron nitride (BN) is determined by the chemical potentials of the boron and…

介观与纳米尺度物理 · 物理学 2012-12-24 L. C. Gomes , S. S. Alexandre , H. Chacham , R. W. Nunes

Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical…