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Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN…

介观与纳米尺度物理 · 物理学 2012-04-11 Harihar Behera , Gautam Mukhopadhyay

Single-atom-thick two-dimensional materials such as graphene usually have a hexagonal lattice while the square-planar lattice is uncommon in the family of two-dimensional materials. Here, we demonstrate that single-atom-thick transition…

材料科学 · 物理学 2022-09-26 Dapeng Liu , Panjun Feng , Shuo Zhang , Miao Gao , Fengjie Ma , Xun-Wang Yan , Z. Y. Xie

Holey graphyne (HGY) is a recently synthesized two-dimensional semiconducting allotrope of carbon composed of a regular pattern of six and eight-vertex carbon rings. In this study, based on first-principles density functional theory and…

材料科学 · 物理学 2022-09-19 Vikram Mahamiya , Alok Shukla , Brahmananda Chakraborty

We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The…

介观与纳米尺度物理 · 物理学 2012-12-20 Samantha Bruzzone , Gianluca Fiori , Giuseppe Iannaccone

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for many applications in photonics. Although its linear and nonlinear optical properties have been extensively studied, its interaction with…

Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic…

We have carried out first-principles calculations on electronic properties of graphene quantum dots embedded in hexagonal boron nitride monolayer sheets. The calculations with density functional theory show that the band gaps of quantum…

介观与纳米尺度物理 · 物理学 2015-05-20 Junwen Li , Vivek B. Shenoy

Van der Waals (vdW) heterostructures consisting of Bernal bilayer graphene (BLG) and hexagonal boron nitride (hBN) are investigated. By performing first-principles calculations we capture the essential BLG band structure features for…

介观与纳米尺度物理 · 物理学 2023-09-27 Klaus Zollner , Eike Icking , Jaroslav Fabian

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number…

介观与纳米尺度物理 · 物理学 2012-03-13 Kikuo Harigaya , Hiroshi Imamura

The properties of graphene-like BC$_6$N semiconductor are studied using density functional theory taking into account the attractive interaction between B and N atoms. In the presence of a strong attractive interaction between B and N…

介观与纳米尺度物理 · 物理学 2021-08-03 Nzar Rauf Abdullah , Botan Jawdat Abdullah , Chi-Shung Tang , Vidar Gudmundsson

We present an ab initio, self consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (hex-BN). We used a local density approximation (LDA) potential and the linear…

材料科学 · 物理学 2020-07-15 Y. Malozovsky , C. Bamba , A. Stewart , L. Franklin , D. Bagayoko

Intercalation is an established technique for tailoring the electronic structure of epitaxial graphene. Moreover, it enables the synthesis of otherwise unstable two-dimensional (2D) layers of elements with unique physical properties…

介观与纳米尺度物理 · 物理学 2022-06-29 Bharti Matta , Philipp Rosenzweig , Olaf Bolkenbaas , Kathrin Küster , Ulrich Starke

Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically…

介观与纳米尺度物理 · 物理学 2015-05-27 M. M. Ugeda , D. Fernández-Torre , I. Brihuega , P. Pou , A. J. Martínez-Galera , R. Pérez , J. M. Gómez-Rodríguez

This study comprehensively examined the structural, electronic, electrochemical, and energy storage properties of boron-vacancy induced porous boron nitride monolayers (BN:VB) as multifunctional materials, anodes for MIBs and H2 storage…

材料科学 · 物理学 2026-05-06 Wadha Alfalasi , Wael Othman , Tanveer Hussain , Nacir Tit

Due to the noticeable structural similarity and being neighborhood in periodic table of group-IV and -V elemental monolayers, whether the combination of group-IV and -V elements could have stable nanosheet structures with optimistic…

材料科学 · 物理学 2021-07-22 Hao Cheng , Jin-Cheng Zheng

Phosphorene, a monolayer of black phosphorus, is promising for nanoelectronic applications not only because it is a natural p-type semiconductor but also it possesses a layer-number dependent direct bandgap (in the range of 0.3 eV~1.5 eV).…

介观与纳米尺度物理 · 物理学 2014-03-26 Jun Dai , Xiao Cheng Zeng

Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have…

First principles calculations based on density functional theory reveal some unusual properties of BN sheet functionalized with hydrogen and fluorine. These properties differ from those of similarly functionalized graphene even though both…

材料科学 · 物理学 2015-05-14 Jian Zhou , Qian Wang , Qiang Sun , Puru Jena

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

We present a first-principles-based many-body typical medium dynamical cluster approximation method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the…

无序系统与神经网络 · 物理学 2017-03-23 C. Ekuma , V. Dobrosavljević , D. Gunlycke