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We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared…

Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition…

凝聚态物理 · 物理学 2009-10-22 Jian Ping Lu

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

强关联电子 · 物理学 2016-11-18 A. A. Shashkin , S. V. Kravchenko

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…

介观与纳米尺度物理 · 物理学 2007-05-23 V. Senz , U. Doetsch , U. Gennser , T. Ihn , T. Heinzel , K. Ensslin , R. Hartmann , D. Gruetzmacher

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…

强关联电子 · 物理学 2020-01-06 J. M. Pizarro , M. J. Calderón , E. Bascones

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…

强关联电子 · 物理学 2007-05-23 A. A. Shashkin , S. V. Kravchenko , T. M. Klapwijk

Transition metal penta-tellurides, ZrTe5 and HfTe5 have been recently drawn a lot of attention due to their fascinating physical properties and for being prominent materials showing topological phase transitions. In this study, we…

Thermoelectric materials can be used to construct devices which recycle waste heat into electricity. However, the best known thermoelectrics are based on rare, expensive or even toxic elements, which limits their widespread adoption. To…

材料科学 · 物理学 2022-12-14 Luis M. Antunes , Keith T. Butler , Ricardo Grau-Crespo

Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moir\'e bands that are approximately described by triangular lattice generalized Hubbard models [PhysRevLett.121.026402]. In this article we…

强关联电子 · 物理学 2021-12-16 Nai Chao Hu , Allan H. MacDonald

The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of…

材料科学 · 物理学 2022-08-24 Yanhao Tang , Jie Gu , Song Liu , Kenji Watanabe , Takashi Taniguchi , James C. Hone , Kin Fai Mak , Jie Shan

The electrodynamics near the metal-to-insulator transitions (MIT) induced, in V3O5 single crystals, by both temperature (T) and pressure (P) has been studied by infrared spectroscopy. The T- and P-dependence of the optical conductivity may…

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…

强关联电子 · 物理学 2022-07-04 Yuting Tan , Vladimir Dobrosavljevic , Louk Rademaker

The metal to insulator (MIT) transition is accompanied by huge changes in physical responses by the control and tuning of experimental parameters like doping, pressure, chemical composition, and magnetic field. Here, we study the magnetic…

材料科学 · 物理学 2026-03-19 N. K. Karn , Mukul S. Laad , V. P. S. Awana

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

强关联电子 · 物理学 2008-02-03 K. Ismail , J. O. Chu , Dragana Popovic , A. B. Fowler , S. Washburn

In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with…

The successful integration of high-temperature superconductors (HTS) into modern technologies requires consistent, accessible, and comprehensive material data, a need that is currently unmet due to the fragmented and incomplete nature of…

超导电性 · 物理学 2025-06-03 Pablo Cayado , João Rosas , João Murta-Pina , Harold S. Ruiz

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at…

强关联电子 · 物理学 2014-07-09 P. Stoliar , M. Rozenberg , E. Janod , B. Corraze , J. Tranchant , L. Cario

Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…