相关论文: Improvement of HRS Variability in OxRRAM by Tailor…

Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…

Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…

Resistive random-access memory (RRAM) is a promising candidate for next-generation memory devices due to its high speed, low power consumption, and excellent scalability. Metal oxides are commonly used as the oxide layer in RRAM devices due…

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

In this paper, we present an efficient hardware mapping methodology for realizing vector matrix multiplication (VMM) on resistive memory (RRAM) arrays. Using the proposed VMM computation technique, we experimentally demonstrate a…

Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching…

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation…

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…

Emerging analog resistive random access memory (RRAM) based on HfOx is an attractive device for non-von Neumann neuromorphic computing systems. The differences in temperature dependent conductance drift among cells hamper computing…

Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…

The higher speed, scalability and parallelism offered by ReRAM crossbar arrays foster development of ReRAM-based next generation AI accelerators. At the same time, sensitivity of ReRAM to temperature variations decreases R_on/Roff ratio and…

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…