中文
相关论文

相关论文: Valley pseudospin in monolayer MoSi2N4 and MoSi2As…

200 篇论文

The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high…

We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous…

介观与纳米尺度物理 · 物理学 2021-03-12 Salvador Barraza-Lopez , Benjamin M. Fregoso , John W. Villanova , Stuart S. P. Parkin , Kai Chang

Crystal symmetry of two-dimensional (2D) materials plays an important role in their electronic and optical properties. Engineering symmetry in 2D materials has recently emerged as a promising way to achieve novel properties and functions.…

Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a…

介观与纳米尺度物理 · 物理学 2020-02-05 Matthew Brooks , Guido Burkard

Two-dimensional materials have attracted considerable attention due to their remarkable electronic, mechanical and optical properties, making them prime candidates for next-generation electronic and optoelectronic applications. Despite…

Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton…

The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $\Sigma$ valleys and the…

材料科学 · 物理学 2014-04-03 Darshana Wickramaratne , Ferdows Zahid , Roger K. Lake

In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS$_2$, lead strong couplings…

材料科学 · 物理学 2021-11-29 Yeon Lee , Dasol Kim , Dong Eon Kim , Alexis Chacón

The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that…

材料科学 · 物理学 2022-06-09 Nayereh Ghobadi , Manouchehr Hosseini , Shoeib Babaee Touski

The newly emerged two-dimensional (2D) materials family of MSi2N4, where M is a transition metal atom (i.e., Mo, W, etc.), has the potential to be named after the conventional and very popular transition metal di-chalcogenides (TMDC), which…

材料科学 · 物理学 2024-05-16 Chayan Das , Abhishek , Dibyajyoti Saikia , Appala Naidu Gandi , Satyajit Sahu

Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically accessed and manipulated for quantum information processing. Here, we integrate MoS2 with achiral silicon disk array…

This work, demonstrate enhanced valley contrasting spin-momentum locked chiral states at van der Waal interface of chiral L-cysteine and mono-atomically thin MoS2 placed at Si/SiO2 substrate at ambient condition. Helicity dependent…

介观与纳米尺度物理 · 物理学 2024-06-12 Susmita Bhattacharya

2D materials with nontrivial energy bands are highly desirable for exploring various topological phases of matter, as low dimensionality opens unprecedented opportunities for manipulating the quantum states. Here, it is reported that…

介观与纳米尺度物理 · 物理学 2020-01-17 Chenqiang Hua , Si Li , Zhu-An Xu , Yi Zheng , Shengyuan A. Yang , Yunhao Lu

Recent advances in condensed matter physics have shown that the valley degree of freedom of electrons in 2D materials with hexagonal symmetry, such as graphene, h-BN, and TMDs, can be efficiently exploited, leading to the emergent field of…

光学 · 物理学 2018-11-02 S. Guddala , R. Bushati , M. Li , A. B. Khanikaev , V. M. Menon

One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic spontaneous valley polarization. Here, we propose the concept…

材料科学 · 物理学 2023-03-01 San-Dong Guo , Yu-Ling Tao , Zhuo-Yan Zhao , Bing Wang , Guangzhao Wang , Xiaotian Wang

In this work, we investigate spin and valley transport properties of a WSe$_2$ monolayer placed on top of a ferromagnetic insulator. We are interested in controlling the transport properties by applying external potentials to the system. To…

介观与纳米尺度物理 · 物理学 2021-03-16 D. Zambrano , P. A. Orellana , L. Rosales , A. Latgé

Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional…

材料科学 · 物理学 2018-11-14 Paul Quayle , Bin Zhang , Jacob Leach , Brian Bersch , Joshua Robinson , Shanee Pacley

In monolayer hexagonal lattices, two inequivalent valleys appear in the Brillouin zone. With inversion symmetry breaking, we find chiral phonons with valley contrasting circular polarization and ionic magnetic moment. At valley centers,…

介观与纳米尺度物理 · 物理学 2015-09-16 Lifa Zhang , Qian Niu

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through…

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…

介观与纳米尺度物理 · 物理学 2025-05-05 Chang Liu , Tongtong Jia , Zheng Sun , Yu Gu , Fan Xu , Kenji Watanabe , Takashi Taniguchi , Jinfeng Jia , Shiyong Wang , Xiaoxue Liu , Tingxin Li