相关论文: Small-signal parameters extraction and noise analy…
We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to…
We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain…
In order to measure energy and fluence of neutron fields, with energy ranging from 8 keV to 1 MeV, a new primary standard is being developed at the IRSN (Institute for Radioprotection and Nuclear Safety). This project, micro-TPC (Micro Time…
Carbon nanotubes (CNTs) are promising candidates to improve the thermal conductivity of nano-composites. The main obstacle to these applications is the extremely high thermal boundary (Kapitza) resistance between the CNTs and their matrix.…
The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device…
The controlled and accurate emission of coherent electronic wave packets is of prime importance for future applications of nano-scale electronics. Here we present a theoretical and experimental analysis of the finite-frequency noise…
Myriad uses, methodologies, and channels have been explored for side-channel analysis. However, specific implementation considerations are often unpublished. This paper explores select test configuration and collection parameters, such as…
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a…
We describe a pulsed measurement technique to suppress hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation…
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has…
Error mitigation (EM) methods are crucial for obtaining reliable results in the realm of noisy intermediate-scale quantum (NISQ) computers, where noise significantly impacts output accuracy. Some EM protocols are particularly efficient for…
We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case…
We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…
We present a new method, based on fractal analysis, to characterize the output of a physical detector that is in the form of a set of real-valued, discrete physical measurements. We apply the method to gravitational-wave data from the…
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and…
Effect of contact interfaces, between metallic single-wall carbon nanotubes (SWCNT) and external electrodes made also of nanotubes, on the electrical conductance is studied. A tight-binding model with both diagonal and off-diagonal…
Most of the time, electronic excitations in mesoscopic conductors are well described, around equilibrium, by non-interacting Landau quasi-particles. This allows a good understanding of the transport properties in the linear regime. However,…
Shot noise encodes additional information not directly inferable from simple electronic transport measurements. Previous measurements in atomic-scale metal junctions at cryogenic temperatures have shown suppression of the shot noise at…
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…