相关论文: Small-signal parameters extraction and noise analy…
Miniaturized electronics require lightweight conductors that maintain high conductance under demanding conditions. CNT networks are promising candidates, but their transport is governed by inter-nanotube junctions where electron waves…
We report on shot noise measurements in carbon nanotube based Fabry-Perot electronic interferometers. As a consequence of quantum interferences, the noise power spectral density oscillates as a function of the voltage applied to the gate…
Component separation is the process with which emission sources in astrophysical maps are generally extracted by taking multi-frequency information into account. It is crucial to develop more reliable methods for component separation for…
How to evaluate and compare image quality from different sub-micrometer (sub$\mu$) CT scans? A simple test phantom made of polymer microbeads is used for recording projection images as well as 13 CT scans in a number of commercial and…
Carbon nanotubes are a fraction of the size of transistors used in today's best microchips, as it could reduce power demands and heating in next electronics revolution. Present study investigates the electronic and magnetic structure of…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…
We describe a field-theoretic approach to calculate quantum shot noise in nanoscale conductors from first principles. Our starting point is the second-quantization field operator to calculate shot noise in terms of single quasi-particle…
Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall…
The detection of point-sources in microwave maps is a critical step in the analysis of the Cosmic Microwave Background (CMB) data. If not properly removed, these sources have adverse effects on the estimation of the power-spectrum and/or…
We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…
Resistive switching phenomenon in carbon film is associated with formation and annihilation of low resistance sp2 nanochannels within the amorphous sp3 matrix. The thinnest point of these graphitic nanochannels behaves like quantum wire…
We report a method to pattern monolayer graphene nanoconstriction field effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback controlled electromigration (FCE) to form a…
Using a quantum detector, a superconductor-insulator-superconductor junction, we probe separately the emission and absorption noise in the quantum regime of a superconducting resonant circuit at equilibrium. At low temperature the resonant…
For systems and devices, such as cognitive radio and networks, that need to be aware of available frequency bands, spectrum sensing has an important role. A major challenge in this area is the requirement of a high sampling rate in the…
We present the detailed treatment of dissipative quantum transport in carbon nanotube field-effect transistors (CNTFETs) using the non-equilibrium Green's function formalism. The effect of phonon scattering on the device characteristics of…
An efficient method for the calculation of ferromagnetic resonant modes of magnetic structures is presented. Finite-element discretization allows flexible geometries and location dependent material parameters. The resonant modes can be used…
Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work,…
The concept of critical ambient pressure is introduced. The particle escapes from its trap when the ambient pressure becomes comparable with or smaller than a critical value, even if the particle motion is cooled by one of the feedback (or…
Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…