相关论文: Study of SiGeSn/GeSn single quantum well towards h…
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band…
A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
We demonstrate that coupled AlGaN/GaN quantum wells with asymmetric widths ($L_1-L_2<30 $ A achieve up to 4.5 times higher mobility than single wells at optimal separation (d = 100 A). Crucially, mobility surpasses single wells when d>40 A…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SESAMs) are developing fast as a practical technology for…
The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well…
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common…
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a…
The fundamental efficiency limit of a single bandgap solar cell is about 31% at one sun with a bandgap of about Eg = 1.35 eV (1), determined by the trade-off of maximising current with a smaller bandgap and voltage with a larger bandgap.…
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission…
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…