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Transition metal dichalcogenides (TMDs) are a branch of two-dimensional materials which in addition to having an easy-to-exfoliate layered structure, also host semiconducting, metallic, superconducting, and topological properties in various…

超导电性 · 物理学 2023-01-25 Suvodeep Paul , Saswata Talukdar , Ravi Shankar Singh , Surajit Saha

In this work we use first-principles density-functional theory (DFT) calculations combined with the maximally localized Wannier function tight binding Hamiltonian (MLWF-TB) and Bethe-Salpeter equation (BSE) formalism to investigate…

We compute the electronic structure of two-dimensional (2D) materials decorated with self-assembled organic monolayers using density functional theory. We find that 2D materials are strongly impacted by near-field electrostatic effects…

材料科学 · 物理学 2021-09-22 Qunfei Zhou , Bukuru Anaclet , Trevor Steiner , Michele Kotiuga , Pierre Darancet

The layered transition metal dichalcogenide, TaSe2, exhibits rich electronic phenomena across its polymorphs, 1T, 2H, and 3R, largely driven by differences in atomic coordination and c-axis stacking. In the 1T phase, octahedral coordination…

超导电性 · 物理学 2026-02-13 Kusal Dharmasiri , Maxim Avdeev , Despina Louca

Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW…

Monolayers of semiconducting transition metal dichalcogenides (TMDs) have long attracted interest for their intriguing optical and electronic properties. Recently TMDs in their quasi-bulk form have started to show considerable promise for…

Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic…

介观与纳米尺度物理 · 物理学 2019-03-08 Lukas Dobusch , Simone Schuler , Vasili Perebeinos , Thomas Mueller

The electronic band structure of crystals is generally influenced by the periodic arrangement of their constituent atoms. Specifically, the emerging two-dimensional (2D) layered structures have shown different band structures with respect…

材料科学 · 物理学 2017-01-04 Seho Yi , Jin-Ho Choi , Kimoon Lee , Sung Wng Kim , Chul Hong Park , Jun-Hyung Cho

Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…

介观与纳米尺度物理 · 物理学 2009-10-31 M. A. Topinka , B. J. LeRoy , R. M. Westervelt , S. E. J. Shaw , R. Fleischmann , E. J. Heller , K. D. Maranowski , A. C. Gossard

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because…

光学 · 物理学 2020-02-11 Ahmed Raza Khan , Teng Lu , Wendi Ma , Yuerui Lu , Yun Liu

Single-layer transition metal dichalcogenides (TMDCs) can adopt two distinct structures corresponding to different coordination of the metal atoms. TMDCs adopting the T-type structure exhibit a rich and diverse set of phenomena, including…

介观与纳米尺度物理 · 物理学 2020-07-29 Daniel T. Larson , Wei Chen , Steven B. Torrisi , Jennifer Coulter , Shiang Fang , Efthimios Kaxiras

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme,…

Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between…

In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and…

We compute the correlated electronic structure of stacked $1T$-TaS$_2$ bilayers using the $GW$ + EDMFT method. Depending on the surface termination, the semi-infinite uncorrelated system is either band-insulating or exhibits a metallic…

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can…

材料科学 · 物理学 2021-03-10 Nourdine Zibouche , Martin Schlipf , Feliciano Giustino

We present a comprehensive first-principles study of the electronic structure of 51 semiconducting monolayer transition metal dichalcogenides and -oxides in the 2H and 1T hexagonal phases. The quasiparticle (QP) band structures with…

材料科学 · 物理学 2015-06-10 Filip Anselm Rasmussen , Kristian Sommer Thygesen

The marriage between a two-dimensional layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that would not have been achieved in either material alone. Interesting recent…

材料科学 · 物理学 2019-05-09 Kyeong Tae Kang , Jeongmin Park , Dongseok Suh , Woo Seok Choi

For layered materials, the interlayer stacking is a critical degree of freedom tuning electronic properties, while its microscopic characterization faces great challenges. The transition-metal dichalcogenide 1T-TaS$_2$ represents a novel…

材料科学 · 物理学 2025-08-01 Li Cheng , Linpeng Nie , Xuanyu Long , Li Liang , Dan Zhao , Jian Li , Zheng Liu , Tao Wu , Xianhui Chen , Xiaolong Zou