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Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their…

材料科学 · 物理学 2023-05-09 J. E. Zimmermann , M. Axt , F. Mooshammer , P. Nagler , C. Schüller , T. Korn , U. Höfer , G. Mette

We explore the direct to indirect band gap transitions in MX$_2$ (M= Mo/W, X= S/Se) transition metal dichalcogenides heterobilayers for different system compositions, strains, and twist angles based on first principles density functional…

Transition metal dichalcogenide (TMD) monolayers attract great attention due to their specific structural, electronic and mechanical properties. The formation of their lateral heterostructures allows a new degree of flexibility in…

材料科学 · 物理学 2020-09-29 Sadegh Imani Yengejeh , William Wen , Yun Wang

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been…

Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as…

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and…

We develop an analytical model to describe sub-bandgap optical absorption in two-dimensional semiconducting transition metal dichalcogenide (s-TMD) nanoflakes. The material system represents an array of few-layer molybdenum disulfide…

介观与纳米尺度物理 · 物理学 2016-10-11 Maxim Trushin , Edmund J. R. Kelleher , Tawfique Hasan

In modern two-dimensional (2D) materials, such as graphene-based systems and atomically-thin transition-metal dichalcogenides, the interplay of strong electronic correlations, tunable moir\'e superlattices, and nontrivial band topology has…

强关联电子 · 物理学 2025-09-26 You Zhou , Ilya Esterlis , Tomasz Smoleński

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of…

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different…

Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high…

介观与纳米尺度物理 · 物理学 2022-09-23 Maria Caterina Giordano , Giorgio Zambito , Matteo Gardella , Francesco Buatier de Mongeot

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic,…

Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor…

Former results for a Tight-Binding (TB) model of CuO planes in La2CuO4 are reinterpreted here to underline their wider implications. It is noted that physical systems being appropriately described by the TB model can exhibit the main…

超导电性 · 物理学 2013-09-12 A. Cabo Montes de Oca , N. H. March , A. Cabo-Bizet

Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with…

We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy…

We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling…

The electronic structure of the nanolaminated transition metal carbide Ti2AlC has been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Ti L, C K and Al L emission spectra are compared with calculated spectra…

材料科学 · 物理学 2011-12-30 M. Magnuson , O. Wilhelmsson , J. -P. Palmquist , U. Jansson , M. Mattesini , S. Li , R. Ahuja , O. Eriksson

Strain-engineered transition-metal dichalcogenide nanobubbles are promising platforms for quantum emission, as revealed by recent experimental observations. In this work, we present an \textit{ab initio} investigation of MoS$_2$, WS$_2$,…

介观与纳米尺度物理 · 物理学 2026-02-25 Stefan Velja , Alexander Steinhoff , Jannis Krumland , Christopher Gies , Caterina Cocchi