相关论文: Unprecedented Severe Atomic Redistribution in Germ…
We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were 15 {\mu}m thick along the beam direction to ensure high…
Al-induced layer exchange crystallization of amorphous Ge thin films has been demonstrated recently, and provides a suitable system to characterize, model and control Ge crystal growth on non-crystalline substrates. Direct observation of Ge…
The dispersive behavior of materials with atomic charge numbers varing from $Z = 4$ (beryllium, Be) to $Z = 82$ (lead, Pb) was investigated experimentally and theoretically at $\gamma$-ray energies up to 2 MeV. The experiment was performed…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an…
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using…
Graphene is expected to be rather insensitive to ionizing particle radiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion…
Computational modelling of passage of high-energy electrons through crystalline media is carried out by means of the relativistic molecular dynamics. The results obtained are compared with the experimental data for 855 MeV electron beam…
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the…
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in…
The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene…
Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on…
Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 300 deg.C. A fourfold symmetric topography forms in the…
We predict peculiar changes in spectral distributions of radiation emitted by ultra-relativistic positrons and electrons in periodically bent crystals with variation of the bending amplitude. It is shown that the changes, being sensitive to…
The irradiation with fast ions with kinetic energies of > 10 MeV leads to the deposition of a high amount of energy along their trajectory (up to several ten keV/nm). The energy is mainly transferred to the electronic subsystem and induces…
Off-normal low energy ion beam sputtering of solid surfaces often leads to morphological instabilities resulting in the spontaneous formation of ripple structures in nanometer length scales. In the case of Si surfaces at ambient…
Natural oxidation is a common degradation mechanism of both mechanical and electronic properties for most of the new two-dimensional materials. From another perspective, controlled oxidation is an option to tune material properties,…
We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern…
Germanium is the base element in many phase-change materials, i.e. systems that can undergo reversible transformations between their crystalline and amorphous phases. They are widely used in current digital electronics and hold great…
A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation…