中文
相关论文

相关论文: Selecting "Convenient Observers" to Probe the Atom…

200 篇论文

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene.…

材料科学 · 物理学 2012-11-29 Rui Zhang , Yunliang Dong , Wenjie Kong , Wenpeng Han , Pingheng Tan , Zhimin Liao , Xiaosong Wu , Dapeng Yu

We study the growth and microscopic structure of large-area graphene monolayers, grown on copper single crystals by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we…

介观与纳米尺度物理 · 物理学 2010-08-23 L. Zhao , K. T. Rim , H. Zhou , R. He , T. F. Heinz , A. Pinczuk , G. W. Flynn , A. N. Pasupathy

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral…

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which…

(See the complete abstract within the thesis in both English and German versions) In this thesis, the process conditions of the epitaxial graphene growth through a socalled polymer-assisted sublimation growth method are minutely…

材料科学 · 物理学 2021-02-18 Davood Momeni Pakdehi

Transmission of low-energetic electrons through two-dimensional materials leads to unique scattering resonances. These resonances contribute to photoemission from occupied bands where they appear as strongly dispersive features of…

材料科学 · 物理学 2017-11-22 M. Krivenkov , D. Marchenko , J. Sánchez-Barriga , O. Rader , A. Varykhalov

Graphene, a single atomic layer of graphitic carbon, has attracted intense attention due to its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are…

介观与纳米尺度物理 · 物理学 2015-02-18 Oleg V. Yazyev , Yong P. Chen

The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly…

Moir\'e superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene's electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated.…

We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface…

介观与纳米尺度物理 · 物理学 2012-01-17 I. Deretzis , A. La Magna

We study structural and electronic properties of graphene grown on SiC substrate using scanning tunneling microscope (STM), spot-profile-analysis low energy electron diffraction (SPA-LEED) and angle resolved photoemission spectroscopy…

介观与纳米尺度物理 · 物理学 2017-07-19 Lunan Huang , Yun Wu , M. T. Hershberger , Daixiang Mou , Ben Schrunk , Michael C. Tringides , Myron Hupalo , Adam Kaminski

Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only…

A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality…

Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by…

The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find…

IR spectroscopy such as Fourier transform infrared spectroscopy (FTIR) are widely used for the investigation of structure and the quantitative determination of substances in the fields of chemistry, physics, biology, medicine, and…

We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model…

介观与纳米尺度物理 · 物理学 2015-05-30 Fan Ming , Andrew Zangwill

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first…

材料科学 · 物理学 2009-11-13 J. Hass , J. E. Millan-Otoya , P. N. First , E. H. Conrad

Compositionally complex solid solutions provide a unique route for engineering high-performance electrocatalysts, where the polyelemental surface composition can be seamlessly tuned to optimize activity, selectivity, and stability. However,…

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons…