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相关论文: Varying Electronic Coupling at Graphene-Copper Int…

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We present a comprehensive study of graphene grown by chemical vapor deposition on copper single crystals with exposed (100), (110) and (111) faces. Direct examination of the as-grown graphene by Raman spectroscopy using a range of visible…

介观与纳米尺度物理 · 物理学 2014-02-03 Otakar Frank , Jana Vejpravova , Vaclav Holy , Ladislav Kavan , Martin Kalbac

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band…

材料科学 · 物理学 2015-05-13 Irene Calizo , Igor Bejenari , Muhammad Rahman , Guanxiong Liu , Alexander A. Balandin

The interaction between graphene and metals represents an important issue for the large-area preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and…

材料科学 · 物理学 2023-03-06 Sara D. Costa , Johan Ek Weis , Otakar Frank , Martin Kalbac

The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and…

The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G…

材料科学 · 物理学 2010-12-06 Zhiqiang Luo , Ting Yu , Zhenhua Ni , Sanhua Lim , Jingzhi Shang , Hailong Hu , Lei Liu , Zexiang Shen , Jianyi Lin

We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity…

Through a combination of monitoring the Raman spectral characteristics of 2D materials grown on copper catalyst layers, and wafer scale automated detection of the fraction of transferred material, we reproducibly achieve transfers with over…

We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at…

We show that the electron-phonon coupling in graphene, in contrast with the non-relativistic two-dimensional electron gas, leads to shifts in the phonon frequencies that are non-trivial functions of the electronic density. These shifts can…

强关联电子 · 物理学 2013-05-29 A. H. Castro Neto , Francisco Guinea

The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene…

The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the…

材料科学 · 物理学 2014-06-09 Rahul Rao , Neal Pierce , Avetik R. Harutyunyan

Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters…

We report a joint study, using Raman micro-spectroscopy and molecular dynamics simulations, on the substrate effect on thermal properties of 2D materials and revisit measurement of thermal expansion coefficient (TEC) of supported 2D film.…

材料科学 · 物理学 2020-09-22 Qianchi Feng , Dongshan Wei , Yudan Su , Zhiguang Zhou , Feng Wang , Chuanshan Tian

The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 - 8 eV above the vacuum level are…

介观与纳米尺度物理 · 物理学 2015-06-15 N. Srivastava , Qin Gao , M. Widom , R. M. Feenstra , Shu Nie , K. F. McCarty , I. V. Vlassiouk

We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results…

The pressure evolution of the Raman spectrum of graphene grown by chemical vapour deposition on polycrystalline copper is investigated with the use of a polar and a non-polar pressure transmitting medium (PTM). The G and 2D Raman bands…

We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…

材料科学 · 物理学 2015-06-22 Isaac Childres , Luis A. Jauregui , Yong P. Chen

We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…

介观与纳米尺度物理 · 物理学 2023-02-15 Jens Sonntag , Kenji Watanabe , Takashi Taniguchi , Bernd Beschoten , Christoph Stampfer

We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due…

We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the…

材料科学 · 物理学 2007-10-24 Anindya Das , Biswanath Chakraborty , A. K. Sood
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