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The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…

Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…

Optically-addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground state manifold; individual defects can be entangled using photon-photon interactions,…

量子物理 · 物理学 2020-12-18 Daniil M. Lukin , Melissa A. Guidry , Jelena Vučković

Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…

Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon…

Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…

4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into…

Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the…

Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage,…

应用物理 · 物理学 2024-06-13 Jonathan R. Dietz , Aaron M. Day , Amberly Xie , Evelyn L. Hu

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have…

With high integration density and excellent optical properties, silicon photonics is becoming a promising platform for complete integration and large-scale optical quantum information processing. Scalable quantum information applications…

量子物理 · 物理学 2022-08-11 Lantian Feng , Ming Zhang , Jianwei Wang , Xiaoqi Zhou , Xiaogang Qiang , Guangcan Guo , Xifeng Ren

Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…

材料科学 · 物理学 2026-03-31 Y. Abdedou , A. Fuchs , P. Fuchs , J. Heiler , D. Herrmann , S. Weber , M. Schäfer , J. L'huillier , F. Kaiser , C. Becher , E. Neu

Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as…

量子物理 · 物理学 2024-06-19 Sridhar Majety , Pranta Saha , Victoria A. Norman , Marina Radulaski

Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…

应用物理 · 物理学 2025-03-26 Nasir Alfaraj , Amr S. Helmy

Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device…

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon…

Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing,…

光学 · 物理学 2023-01-05 Pranta Saha , Sridhar Majety , Marina Radulaski

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum…

In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of…

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon…

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