相关论文: Electron nuclear interactions and electronic struc…

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in…

We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure…

We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…

We present a quantitative theory for simulating the electrically detected magnetic resonance (EDMR) of silicon vacancy-related spin pairs in silicon carbide using steady-state Lindblad master equations. In our theory, we consider V1a and…

The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer…

We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents…

Using an optical tweezers apparatus, we demonstrate three-dimensional control of nanodiamonds in solution with simultaneous readout of ground-state electron-spin resonance (ESR) transitions in an ensemble of diamond nitrogen-vacancy (NV)…

Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and…

The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…

Cu(C$_8$H$_6$N$_2$)Cl$_2$, a strong-rung spin-1/2 Heisenberg ladder compound, is probed by means of electron spin resonance (ESR) spectroscopy in the field-induced gapless phase above $H_{c1}$. The temperature dependence of the ESR…

We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated…

We report the nanoscale spin detection and electron paramagnetic resonance (EPR) spectrum of copper (Cu$^{2+}$) ions via double electron-electron resonance with single spins in diamond at room temperature and low magnetic fields. We measure…

Recently it was proposed that the orbital ordering of $\pi_{x,y}^*$ molecular orbitals in the superoxide CsO$_2$ compound leads to the formation of spin-1/2 chains below the structural phase transition occuring at $T_{\rm{s1}}=61$~K on…

Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits…

We performed STM-ENDOR experiments where the intensity of one of the hyperfine components detected in ESR-STM is recorded while an rf power is irradiated into the tunneling junction and its frequency is swept. When the latter frequency is…

Using electron-spin-resonance (ESR) technique we investigate the magnetic structure of CuCrO2, quasi-two-dimensional antiferromagnet with weakly distorted triangular lattice. Resonance frequencies and the excitation conditions in CuCrO2 at…