相关论文: Surface properties of semiconductors from post-ill…
We present a novel method to measure transient photovoltage at nanointerfaces using ultrafast electron diffraction. In particular, we report our results on the photoinduced electronic excitations and their ensuing relaxations in a…
When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface…
Optoelectronic phenomena in materials such as organic/inorganic hybrid perovskites depend on a complex interplay between light induced carrier generation and fast (electronic) and slower (ionic) processes, all of which are known to be…
Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification, using an tiny tip to image voltages caused by transferred charge. It has been used in stationary studies focused on finding patterns (e.g.…
The motion of free electrons moving parallel and above a semiconductor surface can be influenced by shining laser light onto the surface. Here we report strong deflection of aloof electrons by an undoped GaAs surface illuminated with a…
Combined dry-wet transient materials and devices are introduced, which are based on water-dissolvable dye-doped polymers layered onto non-polar cyclic hydrocarbon sublimating substrates. Light-emitting heterostructures showing amplified…
Black phosphorus is a quasi-two-dimensional layered semiconductor with a narrow direct band gap of 0.3 eV. A giant surface Stark effect can be produced by the potassium doping of black phosphorus, leading to a semiconductor to semimetal…
Two preceding parts of a paper (cond-mat/0508457, cond-mat/0508460) considered the heuristic values of recent experiments pointing to the nearly universal occurrence of photovoltages across solid surfaces under short-circuit conditions.…
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows…
We study the stability of topologically protected zero-energy flat bands at the surface of nodal noncentrosymmetric superconductors, accounting for the alteration of the gap near the surface. Within a selfconsistent mean-field theory, we…
The time dependent transient lateral photovoltaic effect has been studied with us time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 um wide and 1500 um long Co lines…
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…
Decoherence of superconducting transmon qubits is purported to be consistent with surface loss from two-level systems on the substrate surface. Here, we present a study of surface loss in transmon devices, explicitly designed to have…
Benefit to layer-dependent bandgap, van der Waals materials with surface photovoltaic effect (SPV) enable photodetection over a tunable wavelength range with low power consumption. However, sensitive SPV in the infrared region, especially…
We have used the Scanning Kelvin probe microscopy technique to monitor the charging process of highly resistive granular thin films. The sample is connected to two leads and is separated by an insulator layer from a gate electrode. When a…
The energy bands of a semiconductor are lowered by an external magnetic field. When a field is switched on, the straight-line trajectories near the top of the occupied valence band are curved into Landau orbits and Bremsstrahlung is emitted…
Surface waves on liquids act as a dynamical phase grating for incident light. In this article, we revisit the classical method of probing such waves (wavelengths of the order of mm) as well as inherent properties of liquids and liquid films…
We show experimentally the existence of bright and dark spatial solitons in semiconductor resonators for excitation above the band gap energy. These solitons can be switched on, both spontaneously and with address pulses, without the…
We report the results of a cryogenic study of the modification of YBa2Cu3O7-delta surface electronic properties with the probe of a scanning tunneling microscope (STM). A negative voltage applied to the sample during STM tunneling is found…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…